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UC2705DTR

Texas Instruments

UC2705DTR by Texas Instruments

UC2705DTR by Texas Instruments is a MOSFET Gate Driver with 8 terminals, operating voltage range of 5-40V, and turn-on/off time of 0.06 us. It is used for driving MOSFETs in various applications like power supplies and motor control due to its small outline package and high output current limit of 1.5A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,393 parts In-Stock

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2,393

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Digiode

USA . 1,114 parts In-Stock

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1,114

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,748 parts In-Stock

1+ parts

$4.838

100+ parts

-

1k+ parts

$5.355

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1,748

$4.838

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$5.355

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DigiPath Technology Company

USA . 2,341 parts In-Stock

1+ parts

$5.327

100+ parts

$4.901

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2,341

$5.327

$4.901

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ChromeModa Solutions

Germany . 2,588 parts In-Stock

1+ parts

$5.436

100+ parts

$4.458

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2,588

$5.436

$4.458

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IDEA Electronic Components Group

UK . 1,851 parts In-Stock

1+ parts

$5.436

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$4.892

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1,851

$5.436

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$4.892

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AZTECH Wire

Italy . 486 parts In-Stock

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$16.594

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486

$16.594

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One Stop Electronics

USA . 986 parts In-Stock

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$21.500

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986

$21.500

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Corphita

USA . 4,949 parts In-Stock

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Overview

Get ready to take your designs to the next level with the UC2705DTR by Texas Instruments. Crafted with precision and expertise, this MOSFET gate driver offers unparalleled quality and reliability. Ideal for a wide range of applications, this compact yet powerful device ensures seamless performance in demanding environments. Experience the value and benefits of superior technology with the UC2705DTR, where innovation meets excellence. Elevate your projects with Texas Instruments and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for its durability and resistance to heat, making the product reliable in various operating conditions.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 40 V

Can handle higher voltage requirements, providing flexibility in different applications.

Package Shape: RECTANGULAR

The rectangular shape is common and easy to work with, making it compatible with standard PCB layouts.

No. of Terminals: 8

Having multiple terminals allows for more connections and versatility in circuit design.

Minimum Operating Temperature: -25 °C

Can operate in low-temperature environments, making it suitable for a wide range of applications.

Maximum Operating Temperature: 85 °C

Withstands high-temperature conditions, ensuring reliable performance in harsh environments.

Nominal Output Peak Current Limit: 1.5 A

Can deliver a high peak current output, making it suitable for driving MOSFETs with high switching capacities.

Technical Specifications

MOSFET Gate Drivers UC2705DTR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Nominal Output Peak Current Limit:

1.5 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

40 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

20 V

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

.06 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

UC2705DTR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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