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UC2705DTRG4

Texas Instruments

UC2705DTRG4 by Texas Instruments

The Texas Instruments UC2705DTRG4 is a MOSFET gate driver with 8 terminals in a small outline package. It operates b/w -25°C to 85°C, making it suitable for various applications. With bipolar technology and gull wing terminals, it is ideal for surface mount designs requiring precise control of MOSFETs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,227 parts In-Stock

1+ parts

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6,227

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Digiode

USA . 3,061 parts In-Stock

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3,061

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 661 parts In-Stock

1+ parts

$5.752

100+ parts

-

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661

$5.752

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Parana Technologies

USA . 1,665 parts In-Stock

1+ parts

$12.662

100+ parts

-

1k+ parts

$13.125

10k+ parts

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1,665

$12.662

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$13.125

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DigiPath Technology Company

USA . 483 parts In-Stock

1+ parts

$13.942

100+ parts

$12.827

1k+ parts

-

10k+ parts

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483

$13.942

$12.827

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ChromeModa Solutions

Germany . 4,344 parts In-Stock

1+ parts

$14.227

100+ parts

$11.666

1k+ parts

-

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4,344

$14.227

$11.666

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IDEA Electronic Components Group

UK . 876 parts In-Stock

1+ parts

$14.227

100+ parts

$13.516

1k+ parts

$12.804

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876

$14.227

$13.516

$12.804

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One Stop Electronics

USA . 655 parts In-Stock

1+ parts

$40.500

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655

$40.500

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Corphita

USA . 3,032 parts In-Stock

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3,032

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Overview

Experience the unparalleled quality and reliability of Texas Instruments with the UC2705DTRG4 MOSFET Gate Driver. Designed for optimal performance, this product is perfect for a wide range of applications in industries such as automotive, industrial, and power management. With its advanced technology and durable construction, customers can trust in the efficiency and precision of this gate driver to enhance their systems. Trust Texas Instruments to deliver the innovative solutions you need for success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and heat resistance, making the gate driver suitable for various operating conditions.

Surface Mount: YES

Being surface mountable allows for easy and efficient assembly onto circuit boards, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular shape provides a compact design, saving space on the PCB and allowing for more efficient layout of other components.

No. of Terminals: 8

Having 8 terminals allows for a flexible and versatile connection to other components within the circuit.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the gate driver can withstand elevated temperatures without performance degradation, ensuring reliability in demanding applications.

Minimum Operating Temperature: -25 °C

The gate driver can operate effectively in low-temperature environments, providing consistent performance in a wide range of operating conditions.

Technology: BIPOLAR

Bipolar technology offers high switching speeds and low power consumption, making the gate driver efficient and responsive in controlling the MOSFET.

Terminal Pitch: 1.27 mm

The small terminal pitch allows for high-density mounting on the PCB, enabling a compact and efficient circuit layout.

Technical Specifications

MOSFET Gate Drivers UC2705DTRG4 attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-G8

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Sub-Category:

MOSFET Drivers

Surface Mount:

YES

Technology:

BIPOLAR

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Trade Compliance

UC2705DTRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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