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TRF1112

Texas Instruments

TRF1112 by Texas Instruments

TRF1112 by Texas Instruments is a RF down converter with 1700-2400 MHz output frequency range, 90 dB gain, and 4.7 dB noise figure. Ideal for applications requiring high-performance RF signal conversion in temperatures ranging from -40 to 85°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,645 parts In-Stock

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4,645

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Digiode

USA . 2,829 parts In-Stock

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2,829

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Distributors (Availability)

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Parana Technologies

USA . 1,520 parts In-Stock

1+ parts

$1.888

100+ parts

-

1k+ parts

$2.430

10k+ parts

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1,520

$1.888

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$2.430

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DigiPath Technology Company

USA . 497 parts In-Stock

1+ parts

$2.079

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497

$2.079

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ChromeModa Solutions

Germany . 2,040 parts In-Stock

1+ parts

$2.121

100+ parts

$1.739

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2,040

$2.121

$1.739

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IDEA Electronic Components Group

UK . 118 parts In-Stock

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$2.121

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$1.909

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118

$2.121

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$1.909

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AZTECH Wire

Italy . 550 parts In-Stock

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$6.255

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550

$6.255

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One Stop Electronics

USA . 455 parts In-Stock

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$15.000

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455

$15.000

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Semicontronic

India . 267 parts In-Stock

1+ parts

$15.000

100+ parts

$14.625

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$14.550

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267

$15.000

$14.625

$14.550

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Ampacity Inc.

Singapore . 460 parts In-Stock

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$18.000

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460

$18.000

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Corphita

USA . 436 parts In-Stock

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Corohmni

South Africa . 175 parts In-Stock

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Overview

Elevate your RF/Microwave system with the TRF1112 by Texas Instruments. Designed with precision and quality in mind, this down converter offers unmatched performance and reliability. From a wide frequency range to a low noise figure, this component delivers top-notch results for your applications. Whether you're in telecommunications, aerospace, or research, the TRF1112 provides the value and benefits you need to stay ahead of the competition. Trust in Texas Instruments to deliver excellence in every component.

Feature Benefit Bullets

Maximum RF Output Frequency: 2400 MHz

Allows for compatibility with a wide range of RF systems and applications.

Construction: COMPONENT

Ensures high quality and reliability of the product.

Minimum RF Output Frequency: 1700 MHz

Offers flexibility in frequency selection for different applications.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, increasing versatility.

Minimum Down Conversion Gain: 90 dB

Provides high level of signal conversion efficiency.

Minimum Operating Temperature: -40 °C

Operates efficiently even in low temperature conditions.

LO Tunable: YES

Allows for fine-tuning of local oscillator, optimizing performance.

RF or Microwave Device Type: DOWN CONVERTER

Specifically designed for converting RF signals to a lower frequency range.

Characteristic Impedance: 50 ohm

Matches standard impedance for easy integration with existing systems.

Minimum Intermediate Frequency (IF): 400 MHz

Provides a suitable IF range for various signal processing purposes.

Maximum Noise Figure: 4.7 dB

Maintains low noise performance for high quality signal conversion.

Minimum Input Power (CW): 20 dBm

Can handle high input power levels without distortion.

Maximum Intermediate Frequency (IF): 500 MHz

Offers flexibility in selecting IF frequency for different applications.

Technical Specifications

RF/Microwave Up/Down Converters TRF1112 attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Minimum Down Conversion Gain:

90 dB

Maximum Intermediate Frequency (IF):

500 MHz

Minimum Intermediate Frequency (IF):

400 MHz

Minimum Input Power (CW):

20 dBm

LO Tunable:

YES

Maximum Noise Figure:

4.7 dB

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum RF Output Frequency:

2400 MHz

Minimum RF Output Frequency:

1700 MHz

RF or Microwave Device Type:

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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