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TRF1112IRGZRG3

Texas Instruments

TRF1112IRGZRG3 by Texas Instruments

TRF1112IRGZRG3 by Texas Instruments is a RF down converter with freq range 1700-2400 MHz, gain of 90 dB, and noise figure of 4.7 dB. Ideal for applications requiring high-performance RF signal conversion in wireless communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,623 parts In-Stock

1+ parts

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6,623

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Digiode

USA . 2,437 parts In-Stock

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2,437

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 243 parts In-Stock

1+ parts

$2.522

100+ parts

-

1k+ parts

$3.011

10k+ parts

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243

$2.522

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$3.011

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DigiPath Technology Company

USA . 650 parts In-Stock

1+ parts

$2.777

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-

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650

$2.777

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IDEA Electronic Components Group

UK . 1,464 parts In-Stock

1+ parts

$2.834

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$2.551

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1,464

$2.834

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$2.551

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ChromeModa Solutions

Germany . 839 parts In-Stock

1+ parts

$2.834

100+ parts

$2.324

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839

$2.834

$2.324

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AZTECH Wire

Italy . 762 parts In-Stock

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$8.576

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762

$8.576

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Semicontronic

India . 869 parts In-Stock

1+ parts

$24.000

100+ parts

$23.400

1k+ parts

$23.280

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869

$24.000

$23.400

$23.280

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One Stop Electronics

USA . 960 parts In-Stock

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$25.000

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960

$25.000

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Ampacity Inc.

Singapore . 1,100 parts In-Stock

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$32.000

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$32.000

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Corphita

USA . 1,358 parts In-Stock

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1,358

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Corohmni

South Africa . 287 parts In-Stock

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287

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Overview

Experience unparalleled performance and reliability with the TRF1112IRGZRG3 by Texas Instruments. As a leader in RF/Microwave Up/Down Converters, this component offers seamless integration, high-quality construction, and impressive frequency range capabilities. Whether you're in telecommunications, aerospace, or defense industries, this down converter is designed to elevate your projects with its superior down conversion gain, low noise figure, and tunable LO feature. Trust Texas Instruments to deliver cutting-edge technology that exceeds expectations and unlocks endless possibilities for your applications. Elevate your designs with the TRF1112IRGZRG3 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, ideal for rugged environments.

Maximum RF Output Frequency: 2400 MHz

High frequency range enables compatibility with a wide range of RF systems.

Minimum RF Output Frequency: 1700 MHz

Provides flexibility in frequency selection for various applications.

No. of Terminals: 48

Sufficient number of terminals for versatile connections and configurations.

Minimum Down Conversion Gain: 90 dB

High conversion gain ensures efficient signal processing and improved performance.

LO Tunable: YES

Allows for fine-tuning of the local oscillator frequency for precise signal conversion.

Characteristic Impedance: 50 ohm

Standard impedance for seamless integration with RF systems.

Minimum Intermediate Frequency (IF): 400 MHz

Provides a suitable IF range for signal processing and digital conversion.

Maximum Noise Figure: 4.7 dB

Low noise figure ensures minimal signal degradation and high signal-to-noise ratio.

Minimum Input Power (CW): 20 dBm

Supports high input power levels for robust signal handling and performance.

Mounting Feature: SURFACE MOUNT

Easy and convenient mounting option for seamless integration into RF systems.

Technical Specifications

RF/Microwave Up/Down Converters TRF1112IRGZRG3 attributes and parameters. Explore more RF/Microwave Up/Down Converters devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Minimum Down Conversion Gain:

90 dB

Maximum Intermediate Frequency (IF):

500 MHz

Minimum Intermediate Frequency (IF):

400 MHz

Minimum Input Power (CW):

20 dBm

JESD-609 Code:

e3

LO Tunable:

YES

Mounting Feature:

Maximum Noise Figure:

4.7 dB

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Package Equivalence Code:

LCC48,.27SQ,20

Power Supplies (V):

5

Maximum RF Output Frequency:

2400 MHz

Minimum RF Output Frequency:

1700 MHz

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Up/Down Converters

Terminal Finish:

Matte Tin (Sn)

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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