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TMS320DM647CUT9

Texas Instruments

TMS320DM647CUT9 by Texas Instruments

TMS320DM647CUT9 by Texas Instruments is a 32-bit DSP with 900 MHz clock frequency, 64 DMA channels, and 8 timers. It features integrated cache, operates b/w 0-90°C, and has a package style of grid array. Ideal for digital signal processing applications requiring high-speed data processing capabilities.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,770 parts In-Stock

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3,770

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Vyrian

USA . 2,020 parts In-Stock

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2,020

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Distributors (Availability)

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AZTECH Wire

Italy . 469 parts In-Stock

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$10.213

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469

$10.213

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One Stop Electronics

USA . 1,104 parts In-Stock

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$24.000

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$24.000

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Corohmni

South Africa . 939 parts In-Stock

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$24.195

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939

$24.195

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Parana Technologies

USA . 1,689 parts In-Stock

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$27.614

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$37.950

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1,689

$27.614

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$37.950

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DigiPath Technology Company

USA . 549 parts In-Stock

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$30.406

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$27.974

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549

$30.406

$27.974

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ChromeModa Solutions

Germany . 465 parts In-Stock

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$31.027

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$25.442

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465

$31.027

$25.442

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IDEA Electronic Components Group

UK . 45 parts In-Stock

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$31.027

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$29.476

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$27.924

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45

$31.027

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$27.924

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Corphita

USA . 2,954 parts In-Stock

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Microchip USA

USA . 266 parts In-Stock

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Overview

Unlock unparalleled performance and efficiency with the TMS320DM647CUT9 by Texas Instruments, a cutting-edge Digital Signal Processor designed to revolutionize your applications. With integrated cache and a maximum clock frequency of 900 MHz, this powerhouse is perfect for a wide range of tasks. From image processing to telecommunications, this DSP offers exceptional value and benefits to customers seeking top-tier quality and reliability in their products. Trust Texas Instruments to deliver unmatched innovation and performance in every application.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the DSP.

Integrated Cache: YES

Allows for faster data access and processing, improving overall performance.

Maximum Supply Voltage: 1.26 V

Offers flexibility in power supply requirements for the DSP.

On Chip Data RAM Width: 8

Enables efficient data storage and retrieval within the DSP.

Address Bus Width: 14

Supports larger memory addressing capabilities, enhancing the DSP's processing capabilities.

Bit Size: 32

Provides high computational power for handling complex signal processing tasks.

Maximum Clock Frequency: 900 MHz

Allows for fast processing of data and signals, making the DSP suitable for real-time applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the DSP energy-efficient and reliable.

No. of DMA Channels: 64

Supports efficient data transfer between peripherals and memory, improving system performance.

Low Power Mode: YES

Enables power-saving operation modes, extending the battery life of devices utilizing the DSP.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM647CUT9 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

14

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

900 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Integrated Cache:

YES

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B520

JESD-609 Code:

e1

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of DMA Channels:

64

No. of Terminals:

520

No. of Timers:

8

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

245

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

ROM Programmability:

MROM

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Peripheral IC Type:

Trade Compliance

TMS320DM647CUT9 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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