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TIB82S167BCFK

Texas Instruments

TIB82S167BCFK by Texas Instruments

TIB82S167BCFK by Texas Instruments is a TTL technology-based PLD with 14 inputs, 6 outputs, and 48 product terms. It operates at a max clock frequency of 30 MHz and has a temperature range of 0-70°C. This programmable IC in chip carrier package is ideal for commercial applications requiring high-speed logic functions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,217 parts In-Stock

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2,217

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Digiode

USA . 1,994 parts In-Stock

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1,994

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 710 parts In-Stock

1+ parts

$5.000

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710

$5.000

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AZTECH Wire

Italy . 258 parts In-Stock

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$15.808

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258

$15.808

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Parana Technologies

USA . 63 parts In-Stock

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$150.721

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63

$150.721

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DigiPath Technology Company

USA . 1,311 parts In-Stock

1+ parts

$165.962

100+ parts

$152.685

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1,311

$165.962

$152.685

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ChromeModa Solutions

Germany . 1,955 parts In-Stock

1+ parts

$169.349

100+ parts

$138.866

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1,955

$169.349

$138.866

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IDEA Electronic Components Group

UK . 361 parts In-Stock

1+ parts

$169.349

100+ parts

$160.882

1k+ parts

$152.414

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361

$169.349

$160.882

$152.414

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Corphita

USA . 2,964 parts In-Stock

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2,964

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Overview

Discover the TIB82S167BCFK by Texas Instruments, a high-quality Programmable Logic Device that offers unmatched reliability and performance. Manufactured by a trusted industry leader, this PLD is perfect for a wide range of applications. With its innovative technology and versatile design, customers can expect seamless integration, improved efficiency, and cost-effective solutions. Upgrade your project with the TIB82S167BCFK and experience the superior value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent electrical insulation and high thermal conductivity, making the device more reliable and efficient.

Technology Used: TTL

TTL technology offers fast switching speeds and high noise immunity, making the device suitable for high-speed applications.

No. of Inputs: 14

With 14 inputs, this PLD can accommodate a wide range of input signals, providing flexibility in design and functionality.

Nominal Supply Voltage (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard logic levels and power sources.

Maximum Clock Frequency: 30 MHz

The high maximum clock frequency of 30MHz allows for rapid processing and operation of the device, suitable for time-critical applications.

No. of Outputs: 6

Having 6 outputs provides the device with multiple options for driving external circuits or components, enhancing its versatility.

Technical Specifications

Programmable Logic Devices (PLD) TIB82S167BCFK attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

No. of Outputs:

6

No. of Inputs:

14

No. of Product Terms:

48

Maximum Clock Frequency:

30 MHz

Technology:

TTL

Architecture:

PLS-TYPE

Sub-Category:

Programmable Logic Devices

Power Characteristics

Nominal Supply Voltage:

5

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

70 °C (158 °F)

Minimum Operating Temperature:

0 °C (32 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic

Package Style (Meter):

Chip Carrier

Package Code:

Package Shape:

Package Equivalence Code:

LCC28,.45SQ

Terminal Characteristcs

Terminal Position:

Quad

Terminal Form:

No. of Terminals:

28

Terminal Pitch:

1.27 mm

Standards

JESD-30 Code:

S-XQCC-N28

Qualified:

No

Trade Compliance

TIB82S167BCFK Programmable ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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