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TIB82S105BMFKB

Texas Instruments

TIB82S105BMFKB by Texas Instruments

TIB82S105BMFKB by Texas Instruments is a TTL technology-based PLD with 16 inputs, 48 product terms, and 8 outputs. It operates at temperatures ranging from -55°C to 125°C and has a max clock frequency of 25 MHz. Ideal for military-grade applications requiring high-speed programmable logic functions in a ceramic chip carrier package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,959 parts In-Stock

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Digiode

USA . 4,693 parts In-Stock

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4,693

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Distributors (Availability)

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One Stop Electronics

USA . 1,280 parts In-Stock

1+ parts

$6.000

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1,280

$6.000

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AZTECH Wire

Italy . 312 parts In-Stock

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$13.418

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312

$13.418

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Parana Technologies

USA . 1,922 parts In-Stock

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$136.587

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$136.587

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DigiPath Technology Company

USA . 1,199 parts In-Stock

1+ parts

$150.400

100+ parts

$138.368

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1,199

$150.400

$138.368

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ChromeModa Solutions

Germany . 1,786 parts In-Stock

1+ parts

$153.469

100+ parts

$125.845

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1,786

$153.469

$125.845

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IDEA Electronic Components Group

UK . 1,335 parts In-Stock

1+ parts

$153.469

100+ parts

$145.796

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$138.122

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1,335

$153.469

$145.796

$138.122

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Corphita

USA . 4,829 parts In-Stock

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Overview

Unlock the limitless possibilities with the TIB82S105BMFKB by Texas Instruments, a cutting-edge Programmable Logic Device that offers unparalleled flexibility and reliability. Crafted with high-quality ceramic materials and utilizing advanced TTL technology, this device boasts 16 inputs and 8 outputs to meet all your customization needs. Perfect for military-grade applications, this PLD is designed to withstand extreme temperatures from -55 to 125°C while operating at a maximum clock frequency of 25 MHz. Trust in Texas Instruments for superior performance and innovation in programmable ICs. Elevate your projects with the TIB82S105BMFKB today.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packaging provides excellent protection against temperature variations and mechanical stress, ensuring the reliability of the device in harsh environments.

Technology Used: TTL

TTL technology offers fast switching speeds and low power consumption, making this PLD efficient and high-performing.

No. of Inputs: 16

With 16 inputs, this PLD can handle complex logic functions and accommodate a wide range of input signals, making it versatile for different applications.

Nominal Supply Voltage (V): 5

Operating at a nominal supply voltage of 5V makes this PLD compatible with standard logic levels, simplifying integration into existing systems.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this PLD can withstand high-temperature environments, ensuring stability and performance under challenging conditions.

Maximum Clock Frequency: 25 MHz

Supporting a maximum clock frequency of 25 MHz enables this PLD to handle complex logic operations at high speeds, making it suitable for demanding applications.

Technical Specifications

Programmable Logic Devices (PLD) TIB82S105BMFKB attributes and parameters. Explore more Programmable Logic Devices (PLD) devices from Texas Instruments

IC Features

Programmable IC Type:

No. of Outputs:

8

No. of Inputs:

16

No. of Product Terms:

48

Maximum Clock Frequency:

25 MHz

Technology:

TTL

Architecture:

PLS-TYPE

Sub-Category:

Programmable Logic Devices

Power Characteristics

Nominal Supply Voltage:

5

Power Supplies (V):

5 V

Temperature and Environmental Ratings

Maximum Operating Temperature:

125 °C (257 °F)

Minimum Operating Temperature:

-55 °C (-67 °F)

Temprature Grade:

Packaging and Physical Characteristics

Package Body Material:

Ceramic

Package Style (Meter):

Chip Carrier

Package Code:

Package Shape:

Package Equivalence Code:

LCC28,.45SQ

Terminal Characteristcs

Terminal Position:

Quad

Terminal Form:

No. of Terminals:

28

Terminal Pitch:

1.27 mm

Standards

JESD-30 Code:

S-XQCC-N28

Qualified:

No

Screening Level:

38535Q/M;38534H;883B

Trade Compliance

TIB82S105BMFKB Programmable ICs trade compliance attributes, and parameters.

ECCN

3A001.A.2.C

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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