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SN74V263-7GGM

Texas Instruments

SN74V263-7GGM by Texas Instruments

SN74V263-7GGM by Texas Instruments is a FIFO with 8Kx18 organization, 133 MHz clock frequency, and 3.3V supply voltage. It is used in applications requiring fast data transfer and synchronous operation, such as networking equipment and communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,070 parts In-Stock

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Digiode

USA . 988 parts In-Stock

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LWI Electronics Inc

India . 9 parts In-Stock

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Parana Technologies

USA . 2,346 parts In-Stock

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$2.998

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$3.503

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DigiPath Technology Company

USA . 1,098 parts In-Stock

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$3.301

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$3.037

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$3.301

$3.037

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ChromeModa Solutions

Germany . 545 parts In-Stock

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$3.368

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$2.762

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545

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IDEA Electronic Components Group

UK . 200 parts In-Stock

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$3.368

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$3.031

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200

$3.368

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$3.031

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One Stop Electronics

USA . 1,039 parts In-Stock

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$4.000

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$4.000

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AZTECH Wire

Italy . 214 parts In-Stock

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$10.059

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Corphita

USA . 614 parts In-Stock

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Microchip USA

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Overview

Unlock seamless data transfer with the SN74V263-7GGM FIFO by Texas Instruments. With a commitment to quality and innovation, Texas Instruments delivers a reliable solution for your data storage needs. Ideal for a wide range of applications, this FIFO device offers fast cycle times and synchronous operation. Experience the value of efficient data handling and enhanced performance with the SN74V263-7GGM, designed to meet your demands with precision and reliability. Elevate your projects with Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for the package body, ensuring protection for the internal components while keeping the overall weight of the product low.

Cycle Time: 7.5 ns

Fast cycle time allows for quick and efficient data processing, making this FIFO product suitable for high-speed applications.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures data is processed in a synchronized manner, reducing the likelihood of errors and improving overall system performance.

Nominal Supply Voltage / Vsup (V): 3.3

Stable supply voltage of 3.3V ensures consistent and reliable performance of the FIFO product under various operating conditions.

Maximum Clock Frequency (fCLK): 133 MHz

High maximum clock frequency allows for fast data transfer rates, making this FIFO suitable for applications requiring rapid processing.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this FIFO a energy-efficient and reliable choice for electronic systems.

Memory Width: 18

Wide memory width of 18 bits allows for the storage and retrieval of larger data chunks, enabling more efficient data handling in the FIFO.

Output Enable: YES

Output enable feature allows for control over the data output, providing flexibility and customization options for the FIFO product.

Technical Specifications

FIFO SN74V263-7GGM attributes and parameters. Explore more FIFO devices from Texas Instruments

Specs

Maximum Access Time:

5 ns

Additional Features:

CAN ALSO BE CONFIGURED AS 16384 X 9

Alternate Memory Width:

9

Maximum Clock Frequency (fCLK):

133 MHz

Cycle Time:

7.5 ns

JESD-30 Code:

S-PBGA-B100

Length:

10 mm

Memory Density:

147456 bit

Memory IC Type:

Memory Width:

18

No. of Functions:

1

No. of Terminals:

100

No. of Words:

8192 words

No. of Words Code:

8K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

8KX18

Output Enable:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA100,10X10,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.015 Amp

Sub-Category:

FIFOs

Maximum Supply Current:

35 mA

Maximum Supply Voltage (Vsup):

3.45 V

Minimum Supply Voltage (Vsup):

3.15 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

10 mm

Trade Compliance

SN74V263-7GGM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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