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SN74LVC00AQDRQ1

Texas Instruments

SN74LVC00AQDRQ1 by Texas Instruments

SN74LVC00AQDRQ1 by Texas Instruments is a Logic Gates IC with 4 functions, 2 inputs, and 5.1 ns propagation delay. It operates at a supply voltage of 2.7-3.6V and is ideal for automotive applications due to AEC-Q100 screening level. Package style: SOIC-14, technology: CMOS, temp range: -40 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,390 parts In-Stock

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Digiode

USA . 2,620 parts In-Stock

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2,620

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Distributors (Availability)

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One Stop Electronics

USA . 516 parts In-Stock

1+ parts

$15.000

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516

$15.000

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AZTECH Wire

Italy . 448 parts In-Stock

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$17.416

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448

$17.416

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Parana Technologies

USA . 754 parts In-Stock

1+ parts

$29.598

100+ parts

$2,748.608

1k+ parts

$26.638

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754

$29.598

$2,748.608

$26.638

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DigiPath Technology Company

USA . 751 parts In-Stock

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$32.591

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751

$32.591

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ChromeModa Solutions

Germany . 4,869 parts In-Stock

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$33.256

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$27.270

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4,869

$33.256

$27.270

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IDEA Electronic Components Group

UK . 1,237 parts In-Stock

1+ parts

$33.256

100+ parts

$31.593

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$29.930

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1,237

$33.256

$31.593

$29.930

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Corphita

USA . 839 parts In-Stock

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839

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Microchip USA

USA . 147 parts In-Stock

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Overview

Enhance the efficiency and reliability of your automotive electronics with the SN74LVC00AQDRQ1 by Texas Instruments. As a trusted leader in the industry, Texas Instruments delivers top-notch quality and performance in their logic gates. Perfect for a wide range of applications, this product offers fast propagation delay, low power consumption, and high reliability. Ensure seamless operation in your automotive systems with the SN74LVC00AQDRQ1, providing you with the value and peace of mind you deserve.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring long-term performance.

Propagation Delay At Nominal Supply: 4.3 ns

The low propagation delay ensures fast and efficient operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

Being surface mountable makes the logic gates easy to integrate into circuit boards, saving space and simplifying assembly.

No. of Functions: 4

Having multiple functions in a single package allows for increased functionality and versatility in circuit design.

Screening Level: AEC-Q100

This screening level indicates that the logic gates meet automotive industry standards, ensuring reliability and performance in automotive applications.

No. of Inputs: 2

Having dual inputs allows for multiple input signals to be processed, increasing the flexibility and capabilities of the logic gates.

Nominal Supply Voltage / Vsup (V): 2.7

The low nominal supply voltage allows for efficient power consumption and compatibility with a range of power sources.

Load Capacitance (CL): 50 pF

The specified load capacitance helps in determining the speed and efficiency at which the logic gates can drive external loads.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows the logic gates to function reliably in varying environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and versatile digital logic capabilities, making it a popular choice for logic gates.

Technical Specifications

Logic Gates SN74LVC00AQDRQ1 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.3 ns

Propagation Delay (tpd):

5.1 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.7

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74LVC00AQDRQ1 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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