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SN74HC03DRG4

Texas Instruments

SN74HC03DRG4 by Texas Instruments

SN74HC03DRG4 by Texas Instruments is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 31 ns at 5V, making it suitable for industrial applications requiring fast response times. With open-drain output characteristics and CMOS technology, this device operates in temperatures ranging from -40 to 85°C.

Median Price

$0.095

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 908 parts In-Stock

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$0.095

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$0.095

Distributors (In-Stock)

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Nova Conductors

Japan . 450 parts In-Stock

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$0.124

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450

$0.124

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Vyrian

USA . 4,869 parts In-Stock

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4,869

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Velocity Electronics

USA . 1,723 parts In-Stock

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Digiode

USA . 1,277 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 473 parts In-Stock

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$0.081

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473

$0.081

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Bastille Electronics

Australia . 3,813 parts In-Stock

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$0.124

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$0.118

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$0.112

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$0.110

3,813

$0.124

$0.118

$0.112

$0.110

Parana Technologies

USA . 468 parts In-Stock

1+ parts

$10.233

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-

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$10.769

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468

$10.233

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$10.769

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DigiPath Technology Company

USA . 2,112 parts In-Stock

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$11.268

100+ parts

$10.367

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2,112

$11.268

$10.367

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ChromeModa Solutions

Germany . 4,448 parts In-Stock

1+ parts

$11.498

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$9.428

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$11.498

$9.428

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IDEA Electronic Components Group

UK . 682 parts In-Stock

1+ parts

$11.498

100+ parts

$10.923

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$10.348

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682

$11.498

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$10.348

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AZTECH Wire

Italy . 257 parts In-Stock

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$12.187

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Microchip USA

USA . 5,779 parts In-Stock

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Perfect Parts

USA . 2,242 parts In-Stock

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Corphita

USA . 385 parts In-Stock

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Overview

Experience top-notch quality with the SN74HC03DRG4 by Texas Instruments, a leading manufacturer known for its innovative solutions. As part of the Logic Gates category, this product offers unparalleled reliability and performance. Perfect for a wide range of applications, this logic gate provides fast propagation delay and low power consumption, making it an ideal choice for your projects. Trust Texas Instruments to deliver value, benefits, and advantages that exceed your expectations. Upgrade your circuits with the SN74HC03DRG4 and experience the difference in quality and efficiency today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 31 ns

The low propagation delay at nominal supply ensures fast and efficient operation of the logic gates, making them suitable for high-speed applications.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation of the logic gates on circuit boards, saving space and providing a clean layout.

Nominal Supply Voltage / Vsup (V): 5

The 5V nominal supply voltage allows for compatibility with standard power sources, making the logic gates versatile and widely usable.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures that the logic gates can operate reliably in harsh environmental conditions, making them suitable for a wide range of applications.

Technical Specifications

Logic Gates SN74HC03DRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

31 ns

Propagation Delay (tpd):

131 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74HC03DRG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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