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SN74AUP1G58DCKRE4

Texas Instruments

SN74AUP1G58DCKRE4 by Texas Instruments

SN74AUP1G58DCKRE4 by Texas Instruments is a CMOS logic IC with 26.6ns propagation delay, 1.2V nominal voltage, and 30pF load capacitance. It is used in industrial applications requiring a small outline package with Schmitt trigger functionality and 3-state output characteristics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,115 parts In-Stock

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Digiode

USA . 2,376 parts In-Stock

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2,376

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Distributors (Availability)

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One Stop Electronics

USA . 1,604 parts In-Stock

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$12.000

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$12.000

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AZTECH Wire

Italy . 676 parts In-Stock

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$17.239

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676

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Parana Technologies

USA . 1,990 parts In-Stock

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$22.584

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$2,097.244

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$20.325

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1,990

$22.584

$2,097.244

$20.325

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DigiPath Technology Company

USA . 798 parts In-Stock

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$24.868

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ChromeModa Solutions

Germany . 2,429 parts In-Stock

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$25.375

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$20.808

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$25.375

$20.808

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IDEA Electronic Components Group

UK . 1,842 parts In-Stock

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$25.375

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$24.106

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$22.838

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1,842

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Corphita

USA . 3,795 parts In-Stock

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Overview

Enhance your electronic projects with the SN74AUP1G58DCKRE4 by Texas Instruments, a cutting-edge Other Function Logic IC that boasts unmatched quality and reliability. Manufactured by industry leader Texas Instruments, this versatile component is perfect for a wide range of applications. With a compact design and impressive performance, this IC offers customers exceptional value, efficiency, and flexibility. Upgrade your projects today with the SN74AUP1G58DCKRE4 and experience the difference Texas Instruments excellence can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package lightweight and resistant to damage, ensuring durability and reliability.

Propagation Delay At Nominal Supply: 26.6 ns

Low propagation delay ensures fast processing speed, making this product suitable for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy installation on printed circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low supply voltage of 1.2V helps in reducing power consumption and heat dissipation, making it energy-efficient.

Load Capacitance (CL): 30 pF

The specified load capacitance ensures optimal performance and stability in the circuit design.

Power Supplies (V): 1.2/3.3

Compatibility with multiple power supply voltages gives flexibility in system design and integration.

No. of Terminals: 6

Having 6 terminals allows for connecting to other components easily, enhancing versatility and functionality.

Maximum I (ol): 1.7 Amp

High maximum output current capability enables driving various loads without the risk of damage.

Output Characteristics: 3-STATE

3-state output provides an additional logic level, allowing for more complex circuit configurations and control options.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures reliable operation in harsh environmental conditions.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range makes this product suitable for use in rugged industrial applications.

Schmitt Trigger: YES

Schmitt trigger input ensures noise tolerance and clean signal detection, improving the overall performance of the device.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, enhancing the efficiency of the product.

Technical Specifications

Other Function Logic ICs SN74AUP1G58DCKRE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

AUP/ULP/V

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

1.7 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/3.3

Propagation Delay At Nominal Supply:

26.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

SN74AUP1G58DCKRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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