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CD74HCT670EE4

Texas Instruments

CD74HCT670EE4 by Texas Instruments

CD74HCT670EE4 by Texas Instruments is a 16-terminal CMOS logic IC with 3-STATE output. Operating b/w -55 to 125 °C, it has a supply voltage range of 4.5V to 5.5V, making it ideal for military-grade applications requiring high-speed data storage and retrieval in electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,059 parts In-Stock

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Digiode

USA . 3,356 parts In-Stock

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One Stop Electronics

USA . 1,196 parts In-Stock

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$6.000

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$6.000

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Native Components

USA . 356 parts In-Stock

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$9.886

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356

$9.886

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AZTECH Wire

Italy . 368 parts In-Stock

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$9.957

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$9.957

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Northwest PG Solutions

USA . 876 parts In-Stock

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$10.875

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$9.787

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876

$10.875

$9.787

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Parana Technologies

USA . 763 parts In-Stock

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$18.183

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$18.322

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DigiPath Technology Company

USA . 1,838 parts In-Stock

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$20.021

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ChromeModa Solutions

Germany . 3,661 parts In-Stock

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$20.430

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$16.753

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IDEA Electronic Components Group

UK . 932 parts In-Stock

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$20.430

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$19.408

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$18.387

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932

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Corphita

USA . 4,773 parts In-Stock

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Overview

Enhance your electronic projects with the CD74HCT670EE4 by Texas Instruments, a top-quality Other Function Logic IC that guarantees reliable performance and durability. Crafted by the renowned manufacturer Texas Instruments, this IC offers unparalleled value and benefits to customers seeking a versatile solution for their applications. Whether you're working on industrial automation, communication systems, or consumer electronics, this IC's advanced technology and robust design ensure seamless integration and optimal functionality. Elevate your projects with the unmatched quality and performance of the CD74HCT670EE4 from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components of the IC, enhancing durability and reliability.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes this IC compatible with many standard power sources, ensuring ease of integration into various systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125°C, this IC can withstand harsh environmental conditions and high temperature applications.

Output Characteristics: 3-STATE

The 3-state output characteristics allow the IC to have a high impedance state, enabling efficient control of bus lines and minimizing power consumption.

Technology: CMOS

Being based on CMOS technology, this IC offers low power consumption, high noise immunity, and compatibility with various digital systems.

Technical Specifications

Other Function Logic ICs CD74HCT670EE4 attributes and parameters. Explore more Other Function Logic ICs devices from Texas Instruments

Specs

Family:

HCT

JESD-30 Code:

R-PDIP-T16

JESD-609 Code:

e4

Length:

19.305 mm

Logic IC Type:

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

CD74HCT670EE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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