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SN74AUC2G08DCURE4

Texas Instruments

SN74AUC2G08DCURE4 by Texas Instruments

SN74AUC2G08DCURE4 by Texas Instruments is a logic gate with 3ns propagation delay, 2 functions, and 2 inputs. It operates at a nominal voltage of 1.2V and has a load capacitance of 15pF. This CMOS technology device is ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 79,000 parts In-Stock

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Vyrian

USA . 5,534 parts In-Stock

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5,534

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Digiode

USA . 3,029 parts In-Stock

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3,029

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Distributors (Availability)

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AZTECH Wire

Italy . 431 parts In-Stock

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$10.561

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431

$10.561

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Parana Technologies

USA . 518 parts In-Stock

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$26.440

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$27.027

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518

$26.440

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$27.027

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IDEA Electronic Components Group

UK . 2,196 parts In-Stock

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$29.708

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$28.223

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$26.737

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2,196

$29.708

$28.223

$26.737

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ChromeModa Solutions

Germany . 865 parts In-Stock

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$29.708

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$24.361

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865

$29.708

$24.361

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One Stop Electronics

USA . 472 parts In-Stock

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$42.000

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472

$42.000

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DigiPath Technology Company

USA . 905 parts In-Stock

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$26.785

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$26.785

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Microchip USA

USA . 490 parts In-Stock

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Corphita

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Overview

Unlock the power of efficient logic gate technology with the SN74AUC2G08DCURE4 by Texas Instruments. Built with precision and reliability, this logic gate offers high performance in a compact package. Ideal for a range of applications, this product provides fast propagation delay, low power consumption, and versatile 3-state output characteristics. Trust in Texas Instruments to deliver unparalleled quality and innovation. Upgrade your projects with the SN74AUC2G08DCURE4 and experience seamless integration and superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components due to its durability and ability to protect the internal circuitry.

Propagation Delay At Nominal Supply: 3 ns

Low propagation delay ensures fast processing speed, making it suitable for applications requiring quick response times.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

No. of Functions: 2

Having multiple functions in one component reduces the number of individual parts needed for a circuit, simplifying the design and increasing efficiency.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low nominal supply voltage helps in reducing power consumption and heat generation, making the product energy-efficient.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for industrial use.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of supply voltages, enhancing the product's versatility.

Technical Specifications

Logic Gates SN74AUC2G08DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

5 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Propagation Delay At Nominal Supply:

3 ns

Propagation Delay (tpd):

3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74AUC2G08DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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