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SN74AUC1G14DCKRG4

Texas Instruments

SN74AUC1G14DCKRG4 by Texas Instruments

SN74AUC1G14DCKRG4 by Texas Instruments is a CMOS logic gate with 4ns propagation delay at 1.2V, suitable for industrial applications. It features Schmitt Trigger and 3-STATE output characteristics, operates b/w -40 to 85°C, and has a small outline package with dual terminals. The device supports surface mount installation and has a max power supply current of 0.01mA.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,478 parts In-Stock

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Digiode

USA . 1,786 parts In-Stock

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1,786

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 702 parts In-Stock

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$7.000

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702

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Parana Technologies

USA . 1,080 parts In-Stock

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$10.688

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$11.177

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$10.688

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$11.177

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ChromeModa Solutions

Germany . 6,813 parts In-Stock

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$12.009

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$9.847

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$12.009

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IDEA Electronic Components Group

UK . 2,067 parts In-Stock

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$12.009

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$11.409

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$10.808

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2,067

$12.009

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$10.808

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AZTECH Wire

Italy . 313 parts In-Stock

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$17.271

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One Stop Electronics

USA . 422 parts In-Stock

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$31.000

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Corphita

USA . 2,349 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Microchip USA

USA . 1,450 parts In-Stock

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DigiPath Technology Company

USA . 1,341 parts In-Stock

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$10.827

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1,341

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$10.827

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Overview

Experience unmatched performance and reliability with the SN74AUC1G14DCKRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality logic gates for a wide range of applications. With a nominal supply voltage of 1.2V and a propagation delay of just 4ns, this product offers exceptional speed and efficiency. Whether you're designing consumer electronics or industrial equipment, this compact and versatile component will enhance your project with its 3-STATE output characteristics and Schmitt Trigger technology. Trust Texas Instruments to provide innovative solutions that meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates.

Propagation Delay At Nominal Supply: 4 ns

Fast propagation delay allows for efficient operation and quick signal processing.

Surface Mount: YES

Easy integration onto circuit boards for streamlined manufacturing processes.

Nominal Supply Voltage / Vsup (V): 1.2

Low supply voltage requirement helps in reducing power consumption and heat dissipation.

Load Capacitance (CL): 15 pF

Optimized load capacitance for efficient signal transmission and minimal signal distortion.

No. of Terminals: 5

Simplified connectivity with a minimal number of terminals for ease of use.

Maximum Seated Height: 1.1 mm

Low profile design for space-constrained applications and compact circuit layouts.

Technology: CMOS

Utilizes CMOS technology for low power consumption, high noise immunity, and fast operation.

Schmitt Trigger: YES

Incorporation of Schmitt trigger functionality for improved signal processing and noise tolerance.

Technical Specifications

Logic Gates SN74AUC1G14DCKRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

9 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4 ns

Propagation Delay (tpd):

4 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AUC1G14DCKRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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