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SMJ27C128-20JM

Texas Instruments

SMJ27C128-20JM by Texas Instruments

The Texas Instruments SMJ27C128-20JM is a 16KX8 EPROM with 3-STATE output, operating at -55 to 125 °C. It features a CMOS technology, parallel interface, and military-grade temperature range. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

Median Price

$115.546

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (In-Stock)

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Freelance Electronics

USA . 4 parts In-Stock

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$51.252

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$51.252

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Bristol Electronics

USA . 2 parts In-Stock

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$179.840

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Vyrian

USA . 3,081 parts In-Stock

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Digiode

USA . 1,827 parts In-Stock

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1,827

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Rebound Electronics

UK . 24 parts In-Stock

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ECAB

Sweden . 22 parts In-Stock

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Extreme Components

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Resion

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Q Components

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Speed Components Ltd

Israel . 4 parts In-Stock

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LWI Electronics Inc

India . 2 parts In-Stock

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Microfarads

USA . 2 parts In-Stock

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Sinequanon

UK . 1 parts In-Stock

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Parana Technologies

USA . 1,589 parts In-Stock

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$2.666

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$3.153

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$2.666

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DigiPath Technology Company

USA . 639 parts In-Stock

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$2.936

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$2.701

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$2.936

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ChromeModa Solutions

Germany . 5,521 parts In-Stock

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$2.996

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$2.457

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$2.996

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IDEA Electronic Components Group

UK . 1,182 parts In-Stock

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$2.996

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$2.696

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AZTECH Wire

Italy . 663 parts In-Stock

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$12.529

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One Stop Electronics

USA . 1,093 parts In-Stock

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$21.000

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A-Z Elektronik GmbH

Germany . 5,243 parts In-Stock

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Corphita

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Authorized Procurement Solutions

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Kepictronics

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Overview

Upgrade your electronics with the Texas Instruments SMJ27C128-20JM EPROM, a high-quality memory solution designed for military-grade applications. With a durable ceramic, metal-sealed package and 16Kx8 organization, this CMOS technology-based IC offers reliable performance even in extreme temperatures. Perfect for data storage and code execution, this 3-STATE output device provides fast access times and low standby current, ensuring efficient operation. Trust Texas Instruments for superior quality and performance in your next project.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

The ceramic and metal-sealed co-fired package body material provides durability and protection for the EPROM, ensuring reliability in harsh environmental conditions.

Nominal Supply Voltage / Vsup (V): 5

The EPROM operates at a standard supply voltage of 5V, making it compatible with a wide range of systems and applications.

Organization: 16KX8

With an organization of 16KX8, this EPROM offers a balance of storage capacity and access speed, suitable for various memory requirements.

Temperature Grade: MILITARY

Designed for military-grade applications, this EPROM can withstand extreme temperatures and harsh environments, making it a reliable choice for critical operations.

Memory IC Type: UVPROM

The use of UVPROM technology in this EPROM allows for easy and efficient programming and erasing of memory, enhancing flexibility and usability.

Technical Specifications

EPROM SMJ27C128-20JM attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

200 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T28

Length:

36.83 mm

Memory Density:

131072 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

28

No. of Words:

16384 words

No. of Words Code:

16K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

16KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Programming Voltage (V):

12.5

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.0003 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

25 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

SMJ27C128-20JM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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