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LM3S9D96-IBZ80-A2

Texas Instruments

LM3S9D96-IBZ80-A2 by Texas Instruments

LM3S9D96-IBZ80-A2 by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at up to 16.384 MHz. It features 65 I/O lines, ADC and DMA channels, and 98304 bytes of RAM. Ideal for industrial applications requiring high-speed processing and multiple input/output capabilities.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 3,007 parts In-Stock

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Semi Source

USA . 284 parts In-Stock

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AZTECH Wire

Italy . 188 parts In-Stock

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$7.211

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One Stop Electronics

USA . 413 parts In-Stock

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Parana Technologies

USA . 1,462 parts In-Stock

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ChromeModa Solutions

Germany . 4,229 parts In-Stock

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IDEA Electronic Components Group

UK . 765 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,418 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,367 parts In-Stock

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Benley Electronics

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Microchip USA

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Kepictronics

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Overview

Boost your projects to the next level with the LM3S9D96-IBZ80-A2 from Texas Instruments. This high-quality microcontroller is perfect for a wide range of applications, offering seamless integration and reliable performance. With its cutting-edge features and advanced technology, this product provides exceptional value, benefits, and advantages to customers looking for top-tier solutions. Upgrade your design with the LM3S9D96-IBZ80-A2 and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package durable and resistant to damage, ensuring the microcontroller's longevity.

Surface Mount: YES

Surface mount capability simplifies the assembly process, making it easier to integrate the microcontroller into various electronic devices.

Maximum Supply Voltage: 3.6 V

With a maximum supply voltage of 3.6 V, this microcontroller can handle a wide range of power inputs, making it versatile for different applications.

Package Shape: SQUARE

The square package shape allows for efficient use of space on a circuit board, ideal for compact device designs.

Bit Size: 32

The 32-bit architecture provides high processing power and performance, suitable for demanding tasks and applications.

Power Supplies (V): 1.3,3.3

Support for multiple power supply voltages (1.3V and 3.3V) offers flexibility in designing power-efficient systems with various voltage requirements.

No. of Terminals: 108

Having 108 terminals allows for a wide range of input/output connections, enabling complex functionality and connectivity in a device.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array, low profile, and fine pitch package style offers high density mounting, suitable for space-constrained applications.

Minimum Supply Voltage: 3 V

The minimum supply voltage of 3 V ensures compatibility with standard power sources, making it easy to integrate into existing systems.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this microcontroller can withstand high temperature environments, ensuring reliable performance.

Technical Specifications

Microcontrollers LM3S9D96-IBZ80-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

65

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

524288

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

210 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S9D96-IBZ80-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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