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LM3S9D90-IQC80-A1

Texas Instruments

LM3S9D90-IQC80-A1 by Texas Instruments

LM3S9D90-IQC80-A1 by Texas Instruments is a 32-bit microcontroller with 72 I/O lines, operating at a max frequency of 16.384 MHz. It features ADC and DMA channels, suitable for industrial applications requiring a wide temperature range (-40 to 85°C) and low power consumption (1.235-1.365 V).

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 4,331 parts In-Stock

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Digiode

USA . 3,051 parts In-Stock

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3,051

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AZTECH Wire

Italy . 693 parts In-Stock

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$15.102

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One Stop Electronics

USA . 415 parts In-Stock

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$31.000

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Parana Technologies

USA . 461 parts In-Stock

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$31.138

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$73.244

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DigiPath Technology Company

USA . 1,876 parts In-Stock

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$34.287

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$34.287

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ChromeModa Solutions

Germany . 1,745 parts In-Stock

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$34.987

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$28.689

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$34.987

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IDEA Electronic Components Group

UK . 409 parts In-Stock

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$34.987

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$33.238

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$31.488

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409

$34.987

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$31.488

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Corphita

USA . 4,569 parts In-Stock

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A-Z Elektronik GmbH

Germany . 455 parts In-Stock

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455

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Microchip USA

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Kepictronics

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Overview

Unlock the power of innovation with the LM3S9D90-IQC80-A1 microcontroller by Texas Instruments. Crafted with precision and expertise, this versatile device is designed to elevate your projects to new heights. Whether you're working on robotics, IoT applications, or industrial automation, this microcontroller offers unmatched performance and reliability. Embrace the future of technology with Texas Instruments and discover endless possibilities with the LM3S9D90-IQC80-A1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring it can withstand various environmental factors.

Surface Mount: YES

Allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Supply Voltage: 1.365 V

Efficient power usage while still providing enough voltage for operation.

Bit Size: 32

Offers high processing power and capabilities for complex tasks and applications.

No. of Terminals: 100

Plenty of terminals for connecting peripherals and components, making the microcontroller versatile for various projects.

Package Style (Meter): FLATPACK, LOW PROFILE, FINE PITCH

Compact design with fine pitch terminals allows for space-saving on PCBs and efficient routing of traces.

ADC Channels: YES

Ability to interface with analog sensors and signals, expanding the range of applications the microcontroller can be used for.

DMA Channels: YES

Allows for efficient data transfer between peripherals and memory, improving overall system performance.

Maximum Clock Frequency: 16.384 MHz

High clock frequency for quick processing and execution of instructions, making the microcontroller suitable for real-time applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency and reliability of the microcontroller.

Technical Specifications

Microcontrollers LM3S9D90-IQC80-A1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

72

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

80 rpm

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S9D90-IQC80-A1 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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