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LM3S8730-IQC50-A2T

Texas Instruments

LM3S8730-IQC50-A2T by Texas Instruments

Texas Instruments' LM3S8730-IQC50-A2T microcontroller features 32-bit architecture, 131072 ROM words, and 65536 RAM bytes. With a max clock frequency of 8.192 MHz, it is ideal for industrial applications requiring high-speed processing and extensive memory capabilities. The device operates in a temperature range from -40 to 85°C and offers multiple PWM channels for versatile control options.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,739 parts In-Stock

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8,739

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Digiode

USA . 3,765 parts In-Stock

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3,765

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Distributors (Availability)

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AZTECH Wire

Italy . 481 parts In-Stock

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$11.600

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481

$11.600

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Parana Technologies

USA . 2,081 parts In-Stock

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$14.235

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$14.686

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2,081

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$14.686

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DigiPath Technology Company

USA . 1,445 parts In-Stock

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$15.674

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$14.420

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1,445

$15.674

$14.420

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ChromeModa Solutions

Germany . 3,417 parts In-Stock

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$15.994

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$13.115

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3,417

$15.994

$13.115

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IDEA Electronic Components Group

UK . 888 parts In-Stock

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$15.994

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$15.194

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$14.395

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888

$15.994

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$14.395

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One Stop Electronics

USA . 205 parts In-Stock

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$26.000

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205

$26.000

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Component Stockers USA

USA . 448 parts In-Stock

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$99.990

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Microchip USA

USA . 4,831 parts In-Stock

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Corphita

USA . 597 parts In-Stock

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Overview

Unlock endless possibilities with the LM3S8730-IQC50-A2T microcontroller by Texas Instruments. Crafted with precision and innovation, this powerful device offers unparalleled performance and reliability in a compact package. From industrial automation to consumer electronics, this versatile microcontroller is designed to excel in any application. Experience seamless integration, advanced features, and cutting-edge technology that will elevate your projects to new heights. Trust Texas Instruments for quality, trust the LM3S8730-IQC50-A2T for exceptional value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Supply Voltage: 2.75 V

Operates within a safe voltage range, preventing damage to the microcontroller.

Bit Size: 32

Offers a high level of processing power and capability for handling complex tasks.

No. of Terminals: 100

Provides ample connectivity options for interfacing with other components and peripherals.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold temperatures, making it suitable for a wide range of environments.

ADC Channels: YES

Allows for analog-to-digital conversion, enabling the microcontroller to interface with analog sensors and devices.

ROM Words: 131072

Offers a large amount of memory for storing program instructions and data.

RAM Bytes: 65536

Provides sufficient random access memory for temporary data storage and manipulation.

PWM Channels: YES

Supports pulse-width modulation, which is useful for controlling motors and other devices with variable speed and intensity.

Technical Specifications

Microcontrollers LM3S8730-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

32

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S8730-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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