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LM3S828-IQN50-C2T

Texas Instruments

LM3S828-IQN50-C2T by Texas Instruments

Texas Instruments LM3S828-IQN50-C2T is a 32-bit microcontroller with 48 terminals, operating at 3.3V and featuring 8192 bytes of RAM. Ideal for industrial applications, it offers 28 I/O lines, PWM channels, and ADC capabilities with a clock frequency of 0.032 MHz.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,099 parts In-Stock

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4,099

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Digiode

USA . 1,294 parts In-Stock

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1,294

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Distributors (Availability)

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AZTECH Wire

Italy . 654 parts In-Stock

1+ parts

$11.126

100+ parts

-

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654

$11.126

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Microchip USA

USA . 3,402 parts In-Stock

1+ parts

$14.430

100+ parts

$14.220

1k+ parts

$14.120

10k+ parts

$14.020

3,402

$14.430

$14.220

$14.120

$14.020

One Stop Electronics

USA . 911 parts In-Stock

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$24.000

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911

$24.000

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Parana Technologies

USA . 1,934 parts In-Stock

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$51.007

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1,934

$51.007

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DigiPath Technology Company

USA . 1,144 parts In-Stock

1+ parts

$56.165

100+ parts

$51.672

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1,144

$56.165

$51.672

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ChromeModa Solutions

Germany . 2,318 parts In-Stock

1+ parts

$57.311

100+ parts

$46.995

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2,318

$57.311

$46.995

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IDEA Electronic Components Group

UK . 1,349 parts In-Stock

1+ parts

$57.311

100+ parts

$54.445

1k+ parts

$51.580

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1,349

$57.311

$54.445

$51.580

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Corphita

USA . 1,811 parts In-Stock

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1,811

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Overview

Unlock the power of innovation with the Texas Instruments LM3S828-IQN50-C2T microcontroller. Designed with precision and reliability in mind, this product exemplifies the high standards set by its manufacturer. Ideal for a wide range of applications, this microcontroller offers unparalleled performance and efficiency. Experience seamless integration and exceptional functionality, making it the perfect choice for your next project. Elevate your designs with the LM3S828-IQN50-C2T and see the difference for yourself.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy is a durable and cost-effective material for the package body, ensuring the product is robust and long-lasting.

Surface Mount: YES

Surface mount technology allows for easy and efficient installation on circuit boards, saving space and improving manufacturing processes.

Maximum Supply Voltage: 3.6 V

Having a maximum supply voltage of 3.6V provides flexibility in power supply options and compatibility with a wide range of applications.

Bit Size: 32

The 32-bit architecture delivers higher performance and processing power compared to smaller bit sizes, making this microcontroller suitable for complex tasks.

No. of I/O Lines: 28

With 28 I/O lines, this microcontroller offers ample connectivity options for interfacing with external devices and components.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor (CMOS) technology ensures low power consumption and high noise immunity, making the microcontroller efficient and reliable.

Technical Specifications

Microcontrollers LM3S828-IQN50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e3

Length:

7 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S828-IQN50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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