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LM3S828-EGZ50-C2T

Texas Instruments

LM3S828-EGZ50-C2T by Texas Instruments

LM3S828-EGZ50-C2T by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at up to 0.032 MHz. It features 8192 bytes of RAM, 65536 ROM words, and ADC channels for industrial applications requiring high-speed processing and PWM control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,345 parts In-Stock

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Digiode

USA . 926 parts In-Stock

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926

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Distributors (Availability)

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AZTECH Wire

Italy . 526 parts In-Stock

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$19.808

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$19.808

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One Stop Electronics

USA . 821 parts In-Stock

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$29.000

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Parana Technologies

USA . 2,114 parts In-Stock

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$48.260

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DigiPath Technology Company

USA . 1,425 parts In-Stock

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$53.140

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$53.140

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ChromeModa Solutions

Germany . 5,625 parts In-Stock

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$54.225

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$44.464

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$54.225

$44.464

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IDEA Electronic Components Group

UK . 374 parts In-Stock

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$54.225

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$51.514

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$48.802

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374

$54.225

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$48.802

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Corphita

USA . 4,086 parts In-Stock

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Microchip USA

USA . 1,194 parts In-Stock

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Overview

Unlock endless possibilities with the Texas Instruments LM3S828-EGZ50-C2T microcontroller. Crafted by a renowned manufacturer known for superior quality, this chip carrier package offers unmatched performance in industrial-grade applications. With 32-bit power and a wide range of features including ADC channels, PWM channels, and ROM programmability, this microcontroller is a game-changer for developers looking to streamline their projects. Experience seamless integration, reliable functionality, and exceptional value with the Texas Instruments LM3S828-EGZ50-C2T. Elevate your designs today!

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, making this microcontroller easy to integrate into electronic devices.

Maximum Supply Voltage: 3.6 V

Can handle a relatively high supply voltage, providing flexibility in power supply options for the device.

Bit Size: 32

The 32-bit architecture enables efficient processing of data and instructions, making this microcontroller suitable for complex applications.

RAM Bytes: 8192

With a relatively large RAM size, this microcontroller can handle multiple tasks and store data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the reliability and efficiency of the microcontroller.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC (Reduced Instruction Set Computing) microcontroller, it can execute instructions quickly and efficiently, making it suitable for real-time applications.

Technical Specifications

Microcontrollers LM3S828-EGZ50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S828-EGZ50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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