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LM3S828-EGZ50-C2

Texas Instruments

LM3S828-EGZ50-C2 by Texas Instruments

Texas Instruments LM3S828-EGZ50-C2 is a 32-bit microcontroller with 48 terminals, 8192 bytes of RAM, and 65536 ROM words. Operating at up to 0.032 MHz clock frequency, it's ideal for industrial applications requiring ADC channels, PWM support, and RISC technology. With a temperature range from -40 to 105 °C, this chip carrier package suits various surface-mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,588 parts In-Stock

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6,588

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Digiode

USA . 3,845 parts In-Stock

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3,845

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Distributors (Availability)

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One Stop Electronics

USA . 136 parts In-Stock

1+ parts

$4.000

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136

$4.000

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AZTECH Wire

Italy . 219 parts In-Stock

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$10.215

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219

$10.215

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Parana Technologies

USA . 1,498 parts In-Stock

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$34.706

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1,498

$34.706

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DigiPath Technology Company

USA . 1,108 parts In-Stock

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$38.215

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1,108

$38.215

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ChromeModa Solutions

Germany . 6,970 parts In-Stock

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$38.995

100+ parts

$31.976

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6,970

$38.995

$31.976

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IDEA Electronic Components Group

UK . 755 parts In-Stock

1+ parts

$38.995

100+ parts

$37.045

1k+ parts

$35.096

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755

$38.995

$37.045

$35.096

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Microchip USA

USA . 1,730 parts In-Stock

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1,730

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Corphita

USA . 897 parts In-Stock

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897

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Overview

Elevate your projects with the LM3S828-EGZ50-C2 microcontroller by Texas Instruments, a leader in innovative technology. Ideal for a wide range of applications, this high-quality device offers unmatched reliability and performance. Whether you're working on robotics, automation, or IoT projects, this microcontroller provides value, benefits, and advantages that will exceed your expectations. Trust Texas Instruments to deliver top-notch products that empower your creativity and drive success.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology makes it easy to integrate this microcontroller into compact electronic designs.

Maximum Supply Voltage: 3.6 V

Can handle a maximum supply voltage of 3.6 V, providing a decent margin for power input.

Package Shape: SQUARE

Square shape allows for efficient use of space on a circuit board.

Bit Size: 32

32-bit architecture offers enhanced processing capabilities and efficiency.

Power Supplies (V): 3.3

Operates efficiently at a standard power supply voltage of 3.3 V.

No. of Terminals: 48

With 48 terminals, this microcontroller offers a wide range of connectivity options for external devices.

Package Style (Meter): CHIP CARRIER

Chip carrier package style ensures durability and easy installation.

Minimum Supply Voltage: 3 V

Can operate efficiently even at a minimum supply voltage of 3 V.

Maximum Operating Temperature: 105 °C

Capable of operating at high temperatures, suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Able to function in low-temperature environments as well, providing versatility in usage scenarios.

ADC Channels: YES

Integration of Analog-to-Digital Converter channels allows for accurate conversion of analog signals.

Terminal Position: QUAD

Quad terminal position enables easy connectivity and organization of external components.

ROM Words: 65536

With a ROM capacity of 65536 words, this microcontroller can store a large amount of program data.

Maximum Seated Height: 1 mm

Low seated height facilitates compact designs and space-saving applications.

Width: 6.875 mm

Narrow width allows for flexible placement on a PCB, optimizing board layout options.

Maximum Clock Frequency: 0.032 MHz

Capable of operating at a maximum clock frequency of 0.032 MHz, providing high-speed processing capabilities.

Length: 6.875 mm

Compact length ensures minimal footprint and efficient use of board space.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance makes this microcontroller suitable for harsh environments and demanding applications.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes RISC architecture for efficient data processing and control functions.

RAM Bytes: 8192

Generous RAM capacity of 8192 bytes allows for efficient data storage and manipulation during operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing overall performance.

Terminal Form: NO LEAD

No-lead terminal form factor simplifies assembly and soldering processes, reducing manufacturing complexity.

Maximum Supply Current: 110 mA

Capable of handling a maximum supply current of 110 mA, ensuring stable operation under varying load conditions.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage of 3.3 V ensures consistent performance and reliability.

PWM Channels: YES

Presence of Pulse-Width Modulation channels enables precise control of output signals for various applications.

ROM Programmability: FLASH

Flash ROM programmability allows for easy updates and modifications to the program memory, facilitating firmware changes and upgrades.

Terminal Pitch: 0.5 mm

Fine terminal pitch of 0.5 mm enables high-density PCB layouts and miniaturization of electronic devices.

Speed: 50 rpm

Operates at a speed of 50 rpm, suitable for a wide range of motor control and timing applications.

No. of I/O Lines: 28

Offers 28 Input/Output lines for interfacing with external devices, sensors, and peripherals, enhancing connectivity and functionality.

Technical Specifications

Microcontrollers LM3S828-EGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S828-EGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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