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LM3S808-IQN50-C2

Texas Instruments

LM3S808-IQN50-C2 by Texas Instruments

Texas Instruments LM3S808-IQN50-C2 microcontroller features 32-bit Cortex-M3 CPU, 8KB RAM, and 8-channel 10-bit ADC. Ideal for industrial applications with peripherals like timers and UART connectivity. Operating temperature range from -40 to 85°C makes it suitable for various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,423 parts In-Stock

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Vyrian

USA . 2,275 parts In-Stock

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2,275

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Distributors (Availability)

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AZTECH Wire

Italy . 649 parts In-Stock

1+ parts

$15.719

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649

$15.719

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One Stop Electronics

USA . 1,115 parts In-Stock

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$18.000

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$18.000

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Parana Technologies

USA . 1,486 parts In-Stock

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$27.090

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$32.167

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1,486

$27.090

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$32.167

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ChromeModa Solutions

Germany . 2,710 parts In-Stock

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$30.438

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$24.959

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2,710

$30.438

$24.959

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IDEA Electronic Components Group

UK . 1,999 parts In-Stock

1+ parts

$30.438

100+ parts

$28.916

1k+ parts

$27.394

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1,999

$30.438

$28.916

$27.394

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Kepictronics

USA . 4,153 parts In-Stock

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Corphita

USA . 3,404 parts In-Stock

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GreenTree Electronics

Israel . 2,970 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,279 parts In-Stock

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2,279

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DigiPath Technology Company

USA . 1,267 parts In-Stock

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$27.443

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$27.443

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ChipstoGo Electronic ltd

UK . 135 parts In-Stock

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Overview

Discover the cutting-edge LM3S808-IQN50-C2 microcontroller by Texas Instruments, crafted with precision and expertise. Perfect for a wide range of applications, this device offers unparalleled performance and reliability. With advanced features like integrated cache and low power mode, this product provides superior value and benefits to customers. Experience seamless connectivity and efficient operation with this top-of-the-line microcontroller - a true game-changer in the industry. Elevate your projects with the LM3S808-IQN50-C2 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Helps reduce weight and cost, making the product more affordable and easier to handle.

Integrated Cache: YES

Improves performance by reducing memory access time and increasing processing speed.

Surface Mount: YES

Allows for easier manufacturing and assembly processes, saving time and resources.

Maximum Supply Voltage: 3.6 V

Provides a wider operating range and better stability for various applications.

On Chip Data RAM Width: 8

Allows for efficient data processing and storage capabilities.

Package Shape: SQUARE

Facilitates easier placement on circuit boards and more efficient use of space.

Bit Size: 32

Enables processing of larger data chunks and supports complex algorithms and calculations.

Power Supplies (V): 3.3

Common and stable voltage supply for various electronic components and peripherals.

No. of Terminals: 48

Provides ample connectivity options for peripherals and external devices.

Package Style (Meter): FLATPACK

Offers a compact and efficient package design for space-constrained applications.

Minimum Supply Voltage: 3 V

Ensures reliable operation even under lower supply voltage conditions.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments with higher temperature requirements.

CPU Family: CORTEX-M3

Known for its low power consumption and high performance for embedded systems.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold environments without performance degradation.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent connectivity, corrosion resistance, and solderability for long-term reliability.

ADC Channels: YES

Enables analog to digital conversion for sensor interfacing and data acquisition applications.

Terminal Position: QUAD

Facilitates easier alignment and soldering during assembly processes.

ROM Words: 65536

Offers ample storage for program instructions and data storage needs.

Maximum Seated Height: 1.6 mm

Low profile design suitable for applications with height constraints.

Width: 7 mm

Compact size for space-efficient board layout and design.

Boundary Scan: YES

Facilitates testing and debugging of the product during development and production stages.

Peripherals: TIMER(3), WDT

Enhances functionality and supports time-critical operations in embedded systems.

Maximum Clock Frequency: 0.032 MHz

Supports fast operation and real-time processing requirements.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable solder connections during manufacturing and assembly processes.

Peak Reflow Temperature °C: 260

Provides high-temperature tolerance for soldering processes without damaging the product.

Length: 7 mm

Compact size for space-efficient board layout and design.

Temperature Grade: INDUSTRIAL

Suitable for rugged industrial environments with varying temperature conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes RISC architecture for efficient and fast processing of instructions.

No. of Timers: 3

Allows for multiple timing functions and control in embedded applications.

RAM Bytes: 8192

Provides sufficient memory for data storage and processing needs.

Technology: CMOS

Features low power consumption and high noise immunity for reliable operation.

Terminal Form: GULL WING

Ensures reliable and robust connectivity during assembly and operation.

Analog To Digital Convertors: 8-Ch 10-Bit

Supports multiple analog inputs and high-resolution digital conversion for sensor interfaces.

Maximum Supply Current: 110 mA

Efficient power consumption for low energy operation in battery-powered devices.

Nominal Supply Voltage: 3.3 V

Standard voltage supply for compatibility with various electronic components and peripherals.

No. of Serial I/Os: 4

Enables communication with external devices and peripherals through serial interfaces.

PWM Channels: YES

Supports pulse width modulation for precise control of output signals and motor control applications.

Connectivity: I2C, SSI, UART(2)

Multiple communication interfaces for versatile connectivity options with other devices.

ROM Programmability: FLASH

Allows for reprogramming and updating firmware without requiring external programming devices.

Terminal Pitch: 0.5 mm

Fine pitch for high-density integration on circuit boards and compact design layouts.

Format: FIXED POINT

Supports fixed-point arithmetic operations for efficient and accurate mathematical calculations.

Moisture Sensitivity Level (MSL): 3

Suitable for reflow soldering processes with moderate moisture sensitivity requirements.

Speed: 50 rpm

Supports various speed control applications and motor control operations.

Low Power Mode: YES

Provides power-saving features for energy-efficient operation and extended battery life.

On Chip Program ROM Width: 8

Facilitates efficient program storage and execution for embedded applications.

No. of I/O Lines: 28

Offers ample input/output options for sensor interfacing and external device communication.

Technical Specifications

Microcontrollers LM3S808-IQN50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G48

JESD-609 Code:

e4

Length:

7 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

28

No. of Serial I/Os:

4

No. of Terminals:

48

No. of Timers:

3

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

7 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C, SSI, UART(2)

Peripherals:

TIMER(3), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S808-IQN50-C2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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