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LM3S808-IGZ50-C2

Texas Instruments

LM3S808-IGZ50-C2 by Texas Instruments

LM3S808-IGZ50-C2 by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at a max frequency of 0.032 MHz. It features 8192 bytes of RAM, 65536 ROM words, and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,260 parts In-Stock

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Digiode

USA . 685 parts In-Stock

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685

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AZTECH Wire

Italy . 286 parts In-Stock

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$10.665

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286

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One Stop Electronics

USA . 215 parts In-Stock

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$34.000

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Parana Technologies

USA . 715 parts In-Stock

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$54.027

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715

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DigiPath Technology Company

USA . 83 parts In-Stock

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$59.491

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83

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ChromeModa Solutions

Germany . 554 parts In-Stock

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$60.705

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$49.778

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554

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$49.778

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IDEA Electronic Components Group

UK . 318 parts In-Stock

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$60.705

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$57.670

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$54.634

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318

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$54.634

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Corphita

USA . 2,417 parts In-Stock

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Microchip USA

USA . 1,385 parts In-Stock

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Kepictronics

USA . 710 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S808-IGZ50-C2 by Texas Instruments, a cutting-edge microcontroller designed to elevate your project to new heights. With Texas Instruments' reputation for quality and reliability, you can trust that this device will deliver exceptional performance in a variety of applications. From industrial automation to consumer electronics, this versatile microcontroller offers unmatched value and benefits, providing customers with the advantage they need to stay ahead of the competition. Upgrade your project today with the LM3S808-IGZ50-C2 and experience the difference Texas Instruments technology can make.

Feature Benefit Bullets

Surface Mount: YES

Surface mount packaging makes it easy to mount this microcontroller onto a PCB, saving space and making for a more compact design.

Maximum Supply Voltage: 3.6 V

With a maximum supply voltage of 3.6V, this microcontroller can handle higher voltage inputs without risking damage.

Package Shape: SQUARE

The square package shape allows for easy placement and orientation on the PCB, streamlining the assembly process.

Bit Size: 32

The 32-bit architecture provides high performance and processing capabilities, suitable for a wide range of applications.

RAM Bytes: 8192

With 8192 bytes of RAM, this microcontroller can handle complex tasks and store a significant amount of data during operation.

ROM Programmability: FLASH

Flash programmability allows for easy and quick updates to the firmware, making it flexible for future changes or improvements.

Maximum Clock Frequency: 0.032 MHz

The high maximum clock frequency of 32 MHz enables fast execution of instructions, improving overall performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this microcontroller efficient and reliable.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environments with temperature extremes.

ADC Channels: YES

The presence of ADC channels allows the microcontroller to convert analog signals to digital data, enabling sensor interfacing and analog applications.

PWM Channels: YES

PWM channels enable precise control of output signals, making this microcontroller suitable for applications such as motor control and LED dimming.

Technical Specifications

Microcontrollers LM3S808-IGZ50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S808-IGZ50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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