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LM3S808-EQN50-C2T

Texas Instruments

LM3S808-EQN50-C2T by Texas Instruments

LM3S808-EQN50-C2T by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at a max frequency of 0.032 MHz. It features 8192 bytes of RAM and 65536 ROM words, suitable for industrial applications requiring PWM channels and ADC functionality. With a supply voltage range of 3-3.6 V, this CMOS technology-based microcontroller offers versatile performance in compact square packaging.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 9,143 parts In-Stock

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Digiode

USA . 1,417 parts In-Stock

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AZTECH Wire

Italy . 215 parts In-Stock

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$10.295

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One Stop Electronics

USA . 1,119 parts In-Stock

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$25.000

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Parana Technologies

USA . 1,212 parts In-Stock

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$26.788

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$28.619

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DigiPath Technology Company

USA . 2,074 parts In-Stock

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ChromeModa Solutions

Germany . 3,047 parts In-Stock

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$30.099

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$24.681

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IDEA Electronic Components Group

UK . 931 parts In-Stock

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$30.099

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$28.594

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$27.089

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931

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Corphita

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Microchip USA

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Overview

Unlock endless possibilities with the LM3S808-EQN50-C2T microcontroller by Texas Instruments. Harnessing cutting-edge technology and superior craftsmanship, this product offers unrivaled performance and reliability. Ideal for a wide range of applications, from industrial automation to consumer electronics, this microcontroller boasts a 32-bit architecture, high-speed operation, and ample memory storage. Experience seamless integration, enhanced functionality, and unparalleled value with the LM3S808-EQN50-C2T. Elevate your projects to new heights with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and allows for efficient heat dissipation, making the microcontroller reliable for long-term use.

Surface Mount: YES

Surface mount technology simplifies the manufacturing process and allows for a more compact design.

Maximum Supply Voltage: 3.6 V

With a higher supply voltage, this microcontroller can handle a wide range of input voltages, providing versatility in various applications.

Bit Size: 32

A 32-bit architecture allows for faster processing speeds and greater computational capabilities.

Power Supplies (V): 3.3

A standard power supply voltage of 3.3V ensures compatibility with a wide range of electronic components.

No. of Terminals: 48

Having 48 terminals provides ample connectivity options for interfacing with other devices or peripherals.

Package Style (Meter): FLATPACK

The flatpack design offers a low profile and efficient use of board space.

Minimum Operating Temperature: -40 °C

Capable of operating in extremely low temperatures, making it suitable for a wide range of environments.

Maximum Operating Temperature: 105 °C

With a high maximum operating temperature, this microcontroller can withstand harsh conditions without compromising performance.

ADC Channels: YES

Analog-to-digital converter channels allow for the conversion of analog signals to digital data, expanding the range of inputs the microcontroller can process.

ROM Words: 65536

With 65536 ROM words, the microcontroller can store a large amount of program data for efficient operation.

Peripheral IC Type: MICROCONTROLLER, RISC

A RISC architecture simplifies instruction execution, resulting in faster processing speeds and improved efficiency.

RAM Bytes: 8192

With 8192 bytes of RAM, the microcontroller can store and access data quickly, enhancing overall performance.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and secure connections, enhancing the reliability of the microcontroller.

PWM Channels: YES

Pulse-width modulation (PWM) channels enable precise control of analog signals, making the microcontroller suitable for applications requiring fine adjustments.

ROM Programmability: FLASH

Flash ROM allows for easy reprogramming of the microcontroller, providing flexibility for future updates or modifications.

Speed: 50 rpm

With a speed of 50 rpm, the microcontroller can process instructions quickly, improving overall system performance.

No. of I/O Lines: 28

Having 28 I/O lines provides versatility in connecting external devices and sensors, allowing for greater functionality in various applications.

Technical Specifications

Microcontrollers LM3S808-EQN50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S808-EQN50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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