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LM3S6911-EQC50-A2T

Texas Instruments

LM3S6911-EQC50-A2T by Texas Instruments

LM3S6911-EQC50-A2T by Texas Instruments is a 32-bit microcontroller with 262144 ROM words and 65536 RAM bytes. It operates in industrial temperatures (-40 to 105°C) and features PWM channels, ADC channels, and RISC technology. Ideal for applications requiring high-speed processing and precise control in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,221 parts In-Stock

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Digiode

USA . 1,459 parts In-Stock

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1,459

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Distributors (Availability)

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AZTECH Wire

Italy . 525 parts In-Stock

1+ parts

$6.096

100+ parts

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525

$6.096

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One Stop Electronics

USA . 341 parts In-Stock

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$26.000

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341

$26.000

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Parana Technologies

USA . 1,438 parts In-Stock

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$50.939

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1,438

$50.939

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DigiPath Technology Company

USA . 643 parts In-Stock

1+ parts

$56.090

100+ parts

$51.603

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643

$56.090

$51.603

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IDEA Electronic Components Group

UK . 936 parts In-Stock

1+ parts

$57.235

100+ parts

$54.373

1k+ parts

$51.512

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936

$57.235

$54.373

$51.512

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ChromeModa Solutions

Germany . 335 parts In-Stock

1+ parts

$57.235

100+ parts

$46.933

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335

$57.235

$46.933

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Microchip USA

USA . 6,159 parts In-Stock

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Corphita

USA . 2,563 parts In-Stock

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Overview

Experience the power of innovation with the LM3S6911-EQC50-A2T microcontroller by Texas Instruments. This cutting-edge device offers unmatched quality and reliability, making it a top choice for a wide range of applications. From industrial automation to consumer electronics, this microcontroller delivers superior performance and efficiency. With Texas Instruments leading the way in semiconductor manufacturing, you can trust that this product will exceed your expectations. Embrace the future of technology with the LM3S6911-EQC50-A2T and unlock endless possibilities for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller, ensuring long-lasting performance.

Surface Mount: YES

Allows for easy and efficient PCB assembly, reducing production time and costs.

Maximum Supply Voltage: 2.75 V

Optimal supply voltage to power the microcontroller, ensuring stable and efficient operation.

Bit Size: 32

Offers high processing capability for complex tasks and applications.

Power Supplies (V): 2.5,3.3

Compatibility with multiple power supply voltages for versatile usage in various electronic systems.

No. of Terminals: 100

Sufficient number of terminals for connecting to external components and peripherals.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allows for reliable performance in extreme environmental conditions.

ADC Channels: YES

Integrated analog-to-digital converters for accurate signal conversion and processing.

ROM Words: 262144

Large ROM capacity for storing program instructions and data.

Maximum Clock Frequency: 0.032 MHz

High clock frequency for swift data processing and execution of instructions.

RAM Bytes: 65536

Generous RAM capacity for temporary data storage and efficient multitasking.

PWM Channels: YES

Built-in pulse width modulation channels for precise control of connected devices.

Technical Specifications

Microcontrollers LM3S6911-EQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S6911-EQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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