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LM3S6753-IQC50-A2

Texas Instruments

LM3S6753-IQC50-A2 by Texas Instruments

Texas Instruments LM3S6753-IQC50-A2 microcontroller features 32-bit architecture, 131072 ROM words, and 65536 RAM bytes. Ideal for industrial applications, it offers Ethernet connectivity, 4 ADC channels, and low power mode for efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,768 parts In-Stock

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Digiode

USA . 902 parts In-Stock

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902

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AZTECH Wire

Italy . 214 parts In-Stock

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$16.750

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214

$16.750

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Parana Technologies

USA . 575 parts In-Stock

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$21.382

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$21.724

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575

$21.382

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$21.724

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DigiPath Technology Company

USA . 245 parts In-Stock

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$23.544

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$23.544

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ChromeModa Solutions

Germany . 6,889 parts In-Stock

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$24.025

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$19.700

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$24.025

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IDEA Electronic Components Group

UK . 1,038 parts In-Stock

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$24.025

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$22.824

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$21.622

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1,038

$24.025

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One Stop Electronics

USA . 895 parts In-Stock

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$27.000

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895

$27.000

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Ampacity Inc.

Singapore . 1,624 parts In-Stock

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$35.000

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Microchip USA

USA . 2,518 parts In-Stock

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$73.230

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$71.950

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$71.320

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$70.680

2,518

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$71.950

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$70.680

Glotronic Ltd.

UK . 9,000 parts In-Stock

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Lixinc

USA . 7,712 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,057 parts In-Stock

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Corphita

USA . 2,840 parts In-Stock

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Kepictronics

USA . 33 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of innovation with the LM3S6753-IQC50-A2 microcontroller from Texas Instruments. Crafted with precision and expertise, this device offers unmatched quality and reliability in a compact package. Ideal for a wide range of applications, from industrial automation to consumer electronics, this microcontroller boasts integrated cache and advanced peripherals like PWM and UART connectivity. Experience seamless performance and efficiency with the LM3S6753-IQC50-A2, designed to exceed expectations and deliver unparalleled value to customers seeking cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the microcontroller, making it suitable for a wide range of applications.

Integrated Cache: YES

Having an integrated cache improves the processing speed and efficiency of the microcontroller, enhancing its overall performance.

Maximum Supply Voltage: 2.75 V

The maximum supply voltage of 2.75V allows for stable operation and prevents damage to the microcontroller, ensuring reliability.

No. of Serial I/Os: 5

The presence of 5 serial I/Os provides versatility and flexibility in interfacing with other devices, making it suitable for various communication protocols.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC microcontroller allows for fast and efficient processing of instructions, making it ideal for high-performance applications.

Technical Specifications

Microcontrollers LM3S6753-IQC50-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

38

No. of Serial I/Os:

5

No. of Terminals:

100

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

ETHERNET, I2C, SSI, UART(2)

Peripherals:

PWM(6), QEI, TIMER(4), WDT

Analog To Digital Convertors:

4-Ch 10-Bit

Trade Compliance

LM3S6753-IQC50-A2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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