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LM3S6611-IBZ50-A2T

Texas Instruments

LM3S6611-IBZ50-A2T by Texas Instruments

LM3S6611-IBZ50-A2T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. It operates at a max clock frequency of 0.032 MHz, suitable for industrial applications requiring up to 46 I/O lines and PWM channels. With a temperature range from -40 to 85 °C, it offers high performance in compact square package style.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,432 parts In-Stock

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5,432

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Digiode

USA . 2,758 parts In-Stock

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2,758

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Distributors (Availability)

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Andel Nordic

Denmark . 1,212 parts In-Stock

1+ parts

$9.910

100+ parts

-

1k+ parts

$9.514

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$9.514

1,212

$9.910

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$9.514

$9.514

One Stop Electronics

USA . 860 parts In-Stock

1+ parts

$13.000

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860

$13.000

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AZTECH Wire

Italy . 405 parts In-Stock

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$15.912

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405

$15.912

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Parana Technologies

USA . 145 parts In-Stock

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$52.400

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145

$52.400

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DigiPath Technology Company

USA . 1,773 parts In-Stock

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$57.698

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$53.083

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1,773

$57.698

$53.083

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IDEA Electronic Components Group

UK . 1,190 parts In-Stock

1+ parts

$58.876

100+ parts

$55.932

1k+ parts

$52.988

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1,190

$58.876

$55.932

$52.988

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ChromeModa Solutions

Germany . 155 parts In-Stock

1+ parts

$58.876

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$48.278

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155

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Corphita

USA . 636 parts In-Stock

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636

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Microchip USA

USA . 232 parts In-Stock

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Overview

Unlock limitless possibilities with the LM3S6611-IBZ50-A2T by Texas Instruments. As a leader in microcontrollers, Texas Instruments delivers top-quality products that excel in performance and reliability. Designed for a wide range of applications, this microcontroller offers customers unparalleled value and benefits. Experience seamless integration, advanced features, and exceptional precision with the LM3S6611-IBZ50-A2T. Stay ahead of the curve and elevate your projects with this cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy package material ensures durability and protection for the microcontroller chip.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Supply Voltage: 2.75 V

Higher maximum supply voltage allows for versatility in power options.

Bit Size: 32

32-bit processing capability enables high-speed and efficient operation for the microcontroller.

Power Supplies (V): 2.5,3.3

Multiple power supply options provide flexibility in voltage selection for different applications.

No. of Terminals: 108

Large number of terminals allow for connectivity to multiple external components and peripherals.

ADC Channels: YES

Analog-to-digital converter channels enable the microcontroller to interface with analog sensors and devices.

ROM Words: 131072

Large ROM capacity provides ample storage for program instructions and data.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture offers efficient processing and execution of instructions for improved performance.

RAM Bytes: 32768

Ample RAM size allows for efficient data storage and manipulation during program execution.

Technical Specifications

Microcontrollers LM3S6611-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S6611-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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