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LM3S615-EGZ50-C2T

Texas Instruments

LM3S615-EGZ50-C2T by Texas Instruments

LM3S615-EGZ50-C2T by Texas Instruments is a 32-bit microcontroller with 32768 ROM words and 8192 RAM bytes. Operating at a max clock frequency of 0.032 MHz, it is suitable for industrial applications requiring ADC channels, PWM channels, and 34 I/O lines.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,276 parts In-Stock

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Vyrian

USA . 1,962 parts In-Stock

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One Stop Electronics

USA . 1,623 parts In-Stock

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$11.000

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$11.000

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AZTECH Wire

Italy . 877 parts In-Stock

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$14.082

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877

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Parana Technologies

USA . 2,270 parts In-Stock

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$76.682

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$76.682

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ChromeModa Solutions

Germany . 4,206 parts In-Stock

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$86.159

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$70.650

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IDEA Electronic Components Group

UK . 1,562 parts In-Stock

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$86.159

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$81.851

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$77.543

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1,562

$86.159

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$77.543

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QUARKTWIN TECHNOLOGY LTD

USA . 17,011 parts In-Stock

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Microchip USA

USA . 4,047 parts In-Stock

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Corphita

USA . 3,779 parts In-Stock

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DigiPath Technology Company

USA . 1,216 parts In-Stock

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$77.681

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Overview

Unlock limitless possibilities with the LM3S615-EGZ50-C2T microcontroller by Texas Instruments. Manufactured with precision and quality, this powerful device offers unmatched performance in a compact package. Ideal for a wide range of applications, this microcontroller provides customers with enhanced functionality and reliability. Experience seamless integration and superior efficiency with the LM3S615-EGZ50-C2T, setting new standards in the world of microcontrollers. Elevate your projects to new heights with this innovative solution from Texas Instruments.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient integration onto PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

Provides a wide voltage range for flexibility in power supply options.

Package Shape: SQUARE

Saves space on the PCB and ensures efficient use of surface area.

Bit Size: 32

Offers high processing capability and performance for complex applications.

No. of Terminals: 48

Provides ample connectivity options for peripherals and external components.

Minimum Operating Temperature: -40 °C

Can operate in harsh environments with low temperatures, suitable for industrial applications.

ROM Words: 32768

Offers large storage capacity for program code and data, enabling complex algorithms and functions to be executed.

Maximum Clock Frequency: 0.032 MHz

High clock frequency for fast and efficient processing of instructions.

RAM Bytes: 8192

Sufficient memory for data storage and manipulation in real-time applications.

Technology: CMOS

CMOS technology provides low power consumption and high noise immunity, improving overall efficiency.

Technical Specifications

Microcontrollers LM3S615-EGZ50-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

34

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S615-EGZ50-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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