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LM3S608-EQN50-C2

Texas Instruments

LM3S608-EQN50-C2 by Texas Instruments

Texas Instruments' LM3S608-EQN50-C2 is a 32-bit microcontroller with 3.3V supply, 32768 ROM words, and 8192 RAM bytes. Ideal for industrial applications, it operates b/w -40 to 105°C with a clock frequency of 0.032 MHz. With PWM channels and ADC support, it offers versatile control capabilities in a compact flatpack package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,355 parts In-Stock

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Digiode

USA . 4,142 parts In-Stock

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4,142

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Distributors (Availability)

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One Stop Electronics

USA . 1,022 parts In-Stock

1+ parts

$4.000

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1,022

$4.000

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AZTECH Wire

Italy . 693 parts In-Stock

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$16.059

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693

$16.059

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Parana Technologies

USA . 701 parts In-Stock

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$26.931

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$30.178

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701

$26.931

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$30.178

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DigiPath Technology Company

USA . 273 parts In-Stock

1+ parts

$29.654

100+ parts

$27.282

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273

$29.654

$27.282

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ChromeModa Solutions

Germany . 6,460 parts In-Stock

1+ parts

$30.259

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$24.812

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6,460

$30.259

$24.812

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IDEA Electronic Components Group

UK . 2,312 parts In-Stock

1+ parts

$30.259

100+ parts

$28.746

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$27.233

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2,312

$30.259

$28.746

$27.233

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Corphita

USA . 3,456 parts In-Stock

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Microchip USA

USA . 326 parts In-Stock

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326

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Overview

Unleash the power of innovation with the Texas Instruments LM3S608-EQN50-C2 microcontroller. Designed with precision and quality in mind, this product offers unmatched performance and reliability for a wide range of applications. From industrial automation to consumer electronics, this microcontroller is the perfect solution for your project needs. With advanced features and top-notch technology, customers can trust in the value and benefits that this product brings to the table. Experience the advantages of Texas Instruments and take your designs to the next level with the LM3S608-EQN50-C2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that protects the microcontroller from damage.

Maximum Supply Voltage: 3.6 V

Allows for a wide range of voltage inputs, making it versatile for different applications.

Bit Size: 32

High bit size provides more processing power and capabilities for complex tasks.

No. of Terminals: 48

Ample number of terminals for connecting external components and peripherals.

CPU Family: CORTEX-M3

Part of the efficient and powerful ARM Cortex-M3 family, ensuring reliable performance.

ROM Words: 32768

Large ROM capacity for storing program instructions and data.

ADC Channels: YES

Analog-to-digital converter channels allow for interfacing with analog sensors and signals.

RAM Bytes: 8192

Sufficient RAM for data storage and manipulation during operation.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture provides efficient processing and control capabilities.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

PWM Channels: YES

Pulse width modulation channels for precise control of output signals.

Technical Specifications

Microcontrollers LM3S608-EQN50-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP48,.35SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

8192

ROM Words:

32768

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

110 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7 mm

Peripheral IC Type:

Trade Compliance

LM3S608-EQN50-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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