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LM3S317-EGZ25-C2T

Texas Instruments

LM3S317-EGZ25-C2T by Texas Instruments

LM3S317-EGZ25-C2T by Texas Instruments is a 32-bit microcontroller with 48 terminals, operating at up to 25 MHz. It features 4096 bytes of RAM, 16384 ROM words, and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,530 parts In-Stock

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Digiode

USA . 2,752 parts In-Stock

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2,752

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Distributors (Availability)

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AZTECH Wire

Italy . 845 parts In-Stock

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$7.977

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$7.977

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One Stop Electronics

USA . 673 parts In-Stock

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$15.000

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673

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Parana Technologies

USA . 191 parts In-Stock

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$65.125

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DigiPath Technology Company

USA . 1,108 parts In-Stock

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$71.711

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$65.974

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1,108

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$65.974

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ChromeModa Solutions

Germany . 4,917 parts In-Stock

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$73.174

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$60.003

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$73.174

$60.003

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IDEA Electronic Components Group

UK . 1,224 parts In-Stock

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$73.174

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$69.515

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$65.857

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$73.174

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$65.857

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Corphita

USA . 2,522 parts In-Stock

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Microchip USA

USA . 1,065 parts In-Stock

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Overview

Unlock endless possibilities with the LM3S317-EGZ25-C2T by Texas Instruments, a top-tier microcontroller designed to revolutionize your electronics projects. Crafted with precision and expertise, Texas Instruments ensures unparalleled quality and reliability in every product. Ideal for a wide range of applications, this microcontroller offers seamless integration and high performance. Experience the value and benefits of cutting-edge technology with the LM3S317-EGZ25-C2T, where innovation meets excellence. Elevate your projects to new heights with this powerful and versatile microcontroller.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving space and reducing assembly time.

Maximum Supply Voltage: 3.6 V

Suitable for a wide range of applications and provides flexibility in power supply options.

Package Shape: SQUARE

Optimal design for efficient use of PCB space and layout.

Bit Size: 32

High processing capability and performance for complex applications.

Power Supplies (V): 3.3

Standard voltage for many electronic devices, ensuring compatibility with other components.

No. of Terminals: 48

Sufficient connectivity options for interfacing with peripherals and external devices.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Variety of package styles for different mounting and thermal management requirements.

Minimum Supply Voltage: 3 V

Ensures reliable operation even in lower voltage conditions.

Maximum Operating Temperature: 105 °C

Industrial-grade temperature range for durable performance in harsh environments.

Minimum Operating Temperature: -40 °C

Wide temperature range for operation in extreme cold conditions.

ADC Channels: YES

Ability to convert analog signals to digital for sensor interfacing and data acquisition.

Terminal Position: QUAD

Efficient layout for terminal connections and board design.

ROM Words: 16384

Large memory capacity for program storage and data handling.

Maximum Seated Height: 1 mm

Low profile for compact and space-saving designs.

Width: 6.875 mm

Compact size for easy integration into small electronic devices.

Maximum Clock Frequency: 25 MHz

High clock frequency for fast processing and response times.

Length: 6.875 mm

Compact dimensions for space-constrained applications.

Temperature Grade: INDUSTRIAL

Suitable for use in industrial environments with varying temperature conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

Specialized IC type for efficient processing and control capabilities.

RAM Bytes: 4096

Adequate random-access memory for buffering and data storage during operation.

Technology: CMOS

Low power consumption and high noise immunity for reliable operation.

Terminal Form: NO LEAD

Lead-free terminal form for environmental and safety compliance.

Maximum Supply Current: 65 mA

Efficient power consumption for longer battery life and low heat generation.

Nominal Supply Voltage: 3.3 V

Stable supply voltage for consistent performance and operation.

PWM Channels: YES

Pulse-width modulation channels for precise control and signal generation.

ROM Programmability: FLASH

Flash memory for easy reprogramming and firmware updates.

Terminal Pitch: 0.5 mm

Fine pitch for high-density connections and compact PCB layout.

Speed: 25 rpm

Rotational speed capability for motor control and speed regulation applications.

No. of I/O Lines: 30

Sufficient input/output lines for interfacing with external devices and peripherals.

Technical Specifications

Microcontrollers LM3S317-EGZ25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

30

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S317-EGZ25-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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