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LM3S316-EGZ25-C2

Texas Instruments

LM3S316-EGZ25-C2 by Texas Instruments

LM3S316-EGZ25-C2 by Texas Instruments is a 32-bit microcontroller with 3.3V power supply, 8.192 MHz clock frequency, and 4096 bytes of RAM. Ideal for industrial applications, it features ADC channels, PWM support, and operates in temperatures ranging from -40 to 105°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 3,681 parts In-Stock

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3,681

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Digiode

USA . 395 parts In-Stock

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395

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Distributors (Availability)

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AZTECH Wire

Italy . 872 parts In-Stock

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$8.481

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872

$8.481

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One Stop Electronics

USA . 814 parts In-Stock

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$24.000

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Parana Technologies

USA . 813 parts In-Stock

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$39.767

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$3,692.967

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$35.790

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813

$39.767

$3,692.967

$35.790

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DigiPath Technology Company

USA . 953 parts In-Stock

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$43.788

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953

$43.788

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ChromeModa Solutions

Germany . 5,225 parts In-Stock

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$44.682

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$36.639

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5,225

$44.682

$36.639

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IDEA Electronic Components Group

UK . 542 parts In-Stock

1+ parts

$44.682

100+ parts

$42.448

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$40.214

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542

$44.682

$42.448

$40.214

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Corphita

USA . 2,072 parts In-Stock

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Microchip USA

USA . 1,665 parts In-Stock

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Overview

Unlock endless possibilities with the Texas Instruments LM3S316-EGZ25-C2 microcontroller. Manufactured by a trusted industry leader, this high-quality chip offers unparalleled performance and reliability. Ideal for a wide range of applications, this microcontroller provides significant value to customers seeking efficient and effective solutions. Explore the world of innovation with the LM3S316-EGZ25-C2 and experience the benefits of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and facilitating mass production.

Maximum Supply Voltage: 3.6 V

Provides a wide voltage range for compatibility with various power sources and components.

Package Shape: SQUARE

Square shape helps in efficient placement and routing on the PCB, optimizing space utilization.

Bit Size: 32

Provides ample processing power for handling complex tasks and calculations efficiently.

Power Supplies (V): 3.3

Stable power supply ensures reliable performance without risk of voltage fluctuations.

No. of Terminals: 48

Sufficient terminals for connecting various external components and peripherals, enhancing versatility.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Offers different package styles to suit different application requirements, such as thermal management and space constraints.

Minimum Supply Voltage: 3 V

Low minimum supply voltage allows operation in lower power scenarios, conserving energy.

Maximum Operating Temperature: 105 °C

Wide operating temperature range enables operation in harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -40 °C

Can withstand very low temperatures, making it suitable for use in cold environments or outdoor applications.

ADC Channels: YES

Integrated ADC channels enable analog sensor data acquisition for diverse sensing applications.

Terminal Position: QUAD

Quad terminal position allows for easy and organized connection of peripherals, reducing wiring complexity.

ROM Words: 16384

Generous ROM capacity for storing program instructions and data, supporting complex firmware requirements.

Maximum Seated Height: 1 mm

Low profile design allows for compact assembly and fits well in space-constrained designs.

Width: 6.875 mm

Compact width enables space-efficient placement on the PCB and reduces overall board footprint.

Maximum Clock Frequency: 8.192 MHz

High maximum clock frequency enables fast processing and response times for real-time applications.

Length: 6.875 mm

Balanced length dimension for optimal board layout and fitting within size constraints.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliable operation in demanding industrial environments.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture and microcontroller integration provide efficient processing and control capabilities for diverse applications.

RAM Bytes: 4096

Adequate RAM size for storing variables and runtime data, supporting multitasking and data processing requirements.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, contributing to energy efficiency and system reliability.

Terminal Form: NO LEAD

Lead-free terminal form compliant with environmental regulations and offers safer handling during manufacturing.

Maximum Supply Current: 65 mA

Moderate supply current requirement for efficient power usage and compatibility with various power sources.

Nominal Supply Voltage: 3.3 V

Stable and standardized nominal supply voltage for consistent performance across different operating conditions.

PWM Channels: YES

Integrated PWM channels allow for precise control of analog outputs, suitable for motor control and lighting applications.

ROM Programmability: FLASH

Flash ROM programmability enables easy and fast firmware updates and modifications, reducing development time and effort.

Terminal Pitch: 0.5 mm

Fine terminal pitch allows for compact and efficient PCB layout, suitable for small form factor designs.

Speed: 25 rpm

Operational speed of 25 rpm supports a wide range of applications requiring precise timing and control.

No. of I/O Lines: 32

Sufficient I/O lines for interfacing with external devices and peripherals, enhancing connectivity and functionality.

Technical Specifications

Microcontrollers LM3S316-EGZ25-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

32

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S316-EGZ25-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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