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LM3S308-EGZ25-C2T

Texas Instruments

LM3S308-EGZ25-C2T by Texas Instruments

LM3S308-EGZ25-C2T by Texas Instruments is a 32-bit microcontroller with 3.3V power supply, 4096 bytes of RAM, and 16384 ROM words. It operates at a max clock frequency of 25 MHz and has PWM channels for industrial applications requiring high-speed processing in a compact chip carrier package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,213 parts In-Stock

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Digiode

USA . 104 parts In-Stock

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AZTECH Wire

Italy . 198 parts In-Stock

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$16.696

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One Stop Electronics

USA . 1,631 parts In-Stock

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$19.000

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Parana Technologies

USA . 2,122 parts In-Stock

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$47.981

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DigiPath Technology Company

USA . 1,619 parts In-Stock

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$52.833

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ChromeModa Solutions

Germany . 6,974 parts In-Stock

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$53.911

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$44.207

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IDEA Electronic Components Group

UK . 1,920 parts In-Stock

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$53.911

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$51.215

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$48.520

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Microchip USA

USA . 1,949 parts In-Stock

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Corphita

USA . 1,902 parts In-Stock

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Overview

Discover a world of possibilities with the LM3S308-EGZ25-C2T from Texas Instruments. As a leading manufacturer in the microcontroller category, Texas Instruments delivers top-notch quality and reliability. This versatile microcontroller is perfect for a wide range of applications, offering customers unmatched value and benefits. With features like 32-bit processing power, ADC channels, PWM channels, and flash ROM programmability, the LM3S308-EGZ25-C2T provides cutting-edge technology to bring your projects to life. Experience the advantages of Texas Instruments with this innovative microcontroller today.

Feature Benefit Bullets

Surface Mount: YES

Easy to mount on a PCB, saving time and effort during assembly.

Maximum Supply Voltage: 3.6 V

Allows for a wide range of input voltages, making it versatile in different applications.

Package Shape: SQUARE

Square package shape can be space-efficient on a PCB layout, optimizing use of available space.

Bit Size: 32

Offers high processing capability and performance for various tasks.

Power Supplies (V): 3.3

Operates efficiently at a standard voltage level, ensuring compatibility with other components.

No. of Terminals: 48

Sufficient number of terminals for interfacing with external components and peripherals.

Package Style: CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Provides multiple packaging options for different mounting and heat dissipation requirements.

Minimum Supply Voltage: 3 V

Allows for operation even at lower voltage levels, enhancing energy efficiency.

Maximum Operating Temperature: 105 °C

Can withstand high temperatures, suitable for industrial environments.

Minimum Operating Temperature: -40 °C

Can operate in cold temperatures without any issues, adding to its versatility.

ADC Channels: YES

Built-in Analog-to-Digital Converter channels for precise measurement and control.

Terminal Position: QUAD

Quad terminal position offers flexibility in PCB layout and connection options.

ROM Words: 16384

Large ROM capacity for storing program instructions and data.

Maximum Seated Height: 1 mm

Low-profile design for space-constrained applications.

Width: 6.875 mm

Compact width for fitting into tight spaces while maintaining functionality.

Maximum Clock Frequency: 25 MHz

High clock frequency for fast processing and response times.

Length: 6.875 mm

Compact length for overall space-saving on a PCB.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature range ensures reliable operation in harsh environments.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture for optimized performance and efficient processing.

RAM Bytes: 4096

Adequate RAM capacity for data storage and manipulation.

Technology: CMOS

CMOS technology for low power consumption and high noise immunity.

Terminal Form: NO LEAD

Lead-free terminal form for environmental friendliness and regulatory compliance.

Maximum Supply Current: 65 mA

Low supply current for energy-efficient operation.

Nominal Supply Voltage: 3.3 V

Stable nominal supply voltage for consistent performance.

PWM Channels: YES

Pulse Width Modulation channels for precise control of analog outputs.

ROM Programmability: FLASH

Flash memory for reprogrammability and easy updates of firmware.

Terminal Pitch: 0.5 mm

Fine terminal pitch for compact PCB layout and high-density integration.

Speed: 25 rpm

Operates at a speed of 25 rotations per minute for specific applications.

No. of I/O Lines: 28

Adequate number of Input/Output lines for connectivity and interfacing with external devices.

Technical Specifications

Microcontrollers LM3S308-EGZ25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

28

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S308-EGZ25-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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