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LM3S300-IGZ25-C2T

Texas Instruments

LM3S300-IGZ25-C2T by Texas Instruments

LM3S300-IGZ25-C2T by Texas Instruments is a 32-bit microcontroller with 36 I/O lines, 4096 bytes of RAM, and a max clock frequency of 25 MHz. Ideal for industrial applications requiring a compact design, it operates b/w -40 to 85°C and features flash ROM programmability.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,889 parts In-Stock

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Digiode

USA . 2,328 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 896 parts In-Stock

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$15.711

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896

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One Stop Electronics

USA . 863 parts In-Stock

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$17.000

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863

$17.000

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Parana Technologies

USA . 841 parts In-Stock

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$73.385

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841

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ChromeModa Solutions

Germany . 5,031 parts In-Stock

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$82.455

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$67.613

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$82.455

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IDEA Electronic Components Group

UK . 294 parts In-Stock

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$82.455

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$78.332

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$74.210

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294

$82.455

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$74.210

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QUARKTWIN TECHNOLOGY LTD

USA . 17,289 parts In-Stock

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Microchip USA

USA . 1,896 parts In-Stock

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DigiPath Technology Company

USA . 1,852 parts In-Stock

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$74.341

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Corphita

USA . 1,342 parts In-Stock

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Overview

Unlock the power of innovation with the LM3S300-IGZ25-C2T by Texas Instruments. This cutting-edge microcontroller offers unparalleled quality and reliability that Texas Instruments is renowned for. Ideal for a wide range of applications, this microcontroller provides customers with unmatched value, benefits, and advantages. Say goodbye to limitations and hello to endless possibilities with the LM3S300-IGZ25-C2T.

Feature Benefit Bullets

Surface Mount: YES

Allows for easy and efficient integration with PCB designs.

Maximum Supply Voltage: 3.6 V

Provides flexibility and compatibility with various power sources.

Package Shape: SQUARE

Enables compact and space-saving placement on the circuit board.

Bit Size: 32

Offers high processing capability and efficiency for a wide range of applications.

Power Supplies (V): 3.3

Optimal voltage level for stable performance and power efficiency.

No. of Terminals: 48

Provides ample connectivity options for interfacing with other components.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Enhanced thermal management and compact form factor for diverse installation scenarios.

Minimum Supply Voltage: 3 V

Ensures reliable operation even under lower voltage conditions.

Maximum Operating Temperature: 85 °C

Suitable for industrial applications that require high-temperature tolerance.

Minimum Operating Temperature: -40 °C

Capable of functioning in harsh environmental conditions with low temperatures.

ADC Channels: YES

Allows for analog-to-digital conversion, enabling sensor interfacing and data acquisition.

Terminal Position: QUAD

Facilitates easier PCB layout and routing for efficient design.

ROM Words: 16384

Sufficient memory capacity for storing program code and data.

Maximum Seated Height: 1 mm

Low-profile design for compact and space-constrained applications.

Width: 6.875 mm

Compact form factor for easy integration in tight spaces.

Maximum Clock Frequency: 25 MHz

High-speed operation for quick response and real-time processing.

Length: 6.875 mm

Compact form factor for efficient board layout and space utilization.

Temperature Grade: INDUSTRIAL

Suitable for rugged industrial environments with wide temperature ranges.

Peripheral IC Type: MICROCONTROLLER, RISC

Based on RISC architecture for efficient and streamlined processing tasks.

RAM Bytes: 4096

Adequate RAM capacity for temporary data storage and program execution.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high performance.

Terminal Form: NO LEAD

Lead-free terminal construction for compliance with environmental regulations.

Maximum Supply Current: 65 mA

Efficient power consumption with low current draw for extended battery life.

Nominal Supply Voltage: 3.3 V

Stable voltage level for consistent and reliable operation.

PWM Channels: YES

Supports Pulse Width Modulation for precise control of peripherals and devices.

ROM Programmability: FLASH

Flash memory enables easy reprogramming of the device for firmware updates and enhancements.

Terminal Pitch: 0.5 mm

Fine pitch for compact layout and PCB design flexibility.

Speed: 25 rpm

Operates at a high speed suitable for quick response and data processing.

No. of I/O Lines: 36

Sufficient I/O lines for interfacing with external peripherals and components.

Technical Specifications

Microcontrollers LM3S300-IGZ25-C2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-XQCC-N48

Length:

6.875 mm

No. of I/O Lines:

36

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

4096

ROM Words:

16384

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

65 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S300-IGZ25-C2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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