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LM3S2919-IQC50-A2T

Texas Instruments

LM3S2919-IQC50-A2T by Texas Instruments

Texas Instruments' LM3S2919-IQC50-A2T is a 32-bit microcontroller with 262144 ROM words and 65536 RAM bytes. Operating at up to 0.032 MHz, it features 52 I/O lines and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,241 parts In-Stock

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Digiode

USA . 3,603 parts In-Stock

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3,603

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Distributors (Availability)

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AZTECH Wire

Italy . 766 parts In-Stock

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$12.908

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766

$12.908

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Parana Technologies

USA . 47 parts In-Stock

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$22.935

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$23.591

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47

$22.935

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$23.591

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DigiPath Technology Company

USA . 2,373 parts In-Stock

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$25.255

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2,373

$25.255

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ChromeModa Solutions

Germany . 5,527 parts In-Stock

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$25.770

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$21.131

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5,527

$25.770

$21.131

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IDEA Electronic Components Group

UK . 827 parts In-Stock

1+ parts

$25.770

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$24.482

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$23.193

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827

$25.770

$24.482

$23.193

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One Stop Electronics

USA . 1,441 parts In-Stock

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$29.000

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1,441

$29.000

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Corphita

USA . 4,781 parts In-Stock

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Microchip USA

USA . 145 parts In-Stock

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Overview

Experience the power of innovation with the LM3S2919-IQC50-A2T microcontroller by Texas Instruments. Designed for industrial applications, this high-quality device offers a seamless integration of advanced technology and reliable performance. With its 32-bit architecture and versatile capabilities, the LM3S2919-IQC50-A2T provides endless possibilities for creating cutting-edge solutions. Trust in Texas Instruments to deliver excellence in every aspect, from design to functionality. Upgrade your projects today and unlock the full potential of your creations with the LM3S2919-IQC50-A2T microcontroller.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection to the microcontroller, making it suitable for various environments and applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Maximum Supply Voltage: 2.75 V

Operating within a maximum supply voltage of 2.75V ensures safe and stable performance of the microcontroller.

Bit Size: 32

Having a 32-bit architecture allows for high computational power and precision in processing tasks.

Power Supplies (V): 2.5,3.3

Supports multiple power supply options, giving flexibility in design and compatibility with different systems.

No. of Terminals: 100

Having 100 terminals provides ample connectivity options for interfacing with other components and peripherals.

Temperature Grade: INDUSTRIAL

Designed for industrial temperature ranges, ensuring reliability and performance in harsh operating conditions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture in a microcontroller enables efficient processing, reduced power consumption, and faster execution of instructions.

RAM Bytes: 65536

With 65536 bytes of RAM, the microcontroller can handle complex data processing and multitasking efficiently.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Technical Specifications

Microcontrollers LM3S2919-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

52

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S2919-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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