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LM3S2739-IBZ50-A2T

Texas Instruments

LM3S2739-IBZ50-A2T by Texas Instruments

LM3S2739-IBZ50-A2T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 65536 RAM bytes. It operates at a max clock frequency of 0.032 MHz, suitable for industrial applications requiring up to 56 I/O lines and PWM channels. With a package style of GRID ARRAY and terminal finish of TIN SILVER COPPER, it offers versatile performance in various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,460 parts In-Stock

1+ parts

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9,460

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Digiode

USA . 123 parts In-Stock

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123

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 710 parts In-Stock

1+ parts

$5.000

100+ parts

-

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710

$5.000

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AZTECH Wire

Italy . 375 parts In-Stock

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$8.597

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375

$8.597

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Parana Technologies

USA . 792 parts In-Stock

1+ parts

$20.742

100+ parts

-

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$20.881

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792

$20.742

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$20.881

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DigiPath Technology Company

USA . 695 parts In-Stock

1+ parts

$22.840

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695

$22.840

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ChromeModa Solutions

Germany . 6,714 parts In-Stock

1+ parts

$23.306

100+ parts

$19.111

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6,714

$23.306

$19.111

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IDEA Electronic Components Group

UK . 342 parts In-Stock

1+ parts

$23.306

100+ parts

$22.141

1k+ parts

$20.975

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342

$23.306

$22.141

$20.975

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Microchip USA

USA . 2,457 parts In-Stock

1+ parts

$38.560

100+ parts

$38.010

1k+ parts

$37.730

10k+ parts

$37.460

2,457

$38.560

$38.010

$37.730

$37.460

Advanced Electronics

New Zealand . 2,780 parts In-Stock

1+ parts

$46.840

100+ parts

$46.371

1k+ parts

$44.498

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2,780

$46.840

$46.371

$44.498

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Corphita

USA . 1,098 parts In-Stock

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1,098

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Overview

Experience the cutting-edge technology of the LM3S2739-IBZ50-A2T microcontroller by Texas Instruments. This innovative device, featuring a 32-bit architecture and a wide range of power supplies, is perfect for a variety of applications in industrial settings. With its high-quality construction and advanced features, this microcontroller offers unparalleled performance and reliability. Trust Texas Instruments to provide you with the tools you need to take your projects to the next level. Elevate your designs with the LM3S2739-IBZ50-A2T microcontroller today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and reliability for the microcontroller, ensuring longevity and resistance to physical wear and tear.

Surface Mount: YES

Ease of installation and space-saving design for compact electronic devices.

ADC Channels: YES

Ability to convert analog signals into digital form, making it versatile for a variety of sensing and measurement applications.

ROM Programmability: FLASH

Allows for easy reprogramming of the memory, enabling flexibility for firmware updates and modifications.

Technology: CMOS

Low power consumption and high noise immunity, suitable for battery-powered or energy-efficient applications.

PWM Channels: YES

Provides the capability for pulse-width modulation outputs, crucial for controlling motor speed, LED brightness, and other analog functions.

Technical Specifications

Microcontrollers LM3S2739-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

56

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S2739-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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