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LM3S2678-IQR50-A0

Texas Instruments

LM3S2678-IQR50-A0 by Texas Instruments

Texas Instruments LM3S2678-IQR50-A0 microcontroller features 32-bit CPU, 131072 ROM words, and 32768 RAM bytes. Ideal for industrial applications, it supports CAN, I2C, UART connectivity and offers low power mode with 2.25-2.75V supply voltage range.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,510 parts In-Stock

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Digiode

USA . 1,645 parts In-Stock

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1,645

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Distributors (Availability)

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AZTECH Wire

Italy . 220 parts In-Stock

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$19.589

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220

$19.589

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One Stop Electronics

USA . 994 parts In-Stock

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$25.000

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994

$25.000

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Microchip USA

USA . 2,682 parts In-Stock

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$52.110

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$51.200

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$50.750

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$50.290

2,682

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$50.290

Parana Technologies

USA . 604 parts In-Stock

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$66.829

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604

$66.829

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ChromeModa Solutions

Germany . 4,666 parts In-Stock

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$75.089

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$61.573

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$75.089

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IDEA Electronic Components Group

UK . 1,298 parts In-Stock

1+ parts

$75.089

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$71.335

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$67.580

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$67.580

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Corphita

USA . 4,041 parts In-Stock

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DigiPath Technology Company

USA . 2,110 parts In-Stock

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$67.700

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Lixinc

USA . 454 parts In-Stock

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Perfect Parts

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Overview

Unlock endless possibilities with the Texas Instruments LM3S2678-IQR50-A0 microcontroller. Designed with cutting-edge technology, this device offers high-quality performance and reliability for a wide range of applications. From industrial automation to consumer electronics, this microcontroller delivers value and benefits that exceed expectations. With integrated cache, low power mode, and a variety of peripherals, the LM3S2678-IQR50-A0 provides unmatched versatility and efficiency. Trust Texas Instruments to provide you with the tools you need to bring your ideas to life.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight housing for the microcontroller, making it suitable for a variety of applications.

Integrated Cache: YES

Improves performance by storing frequently accessed data for quick retrieval, enhancing overall processing speed.

Maximum Supply Voltage: 2.75 V

Allows for safe operation within a defined voltage range, providing protection against overvoltage conditions.

On Chip Data RAM Width: 8

Offers a wide data path for efficient data processing and storage capabilities within the microcontroller.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes Reduced Instruction Set Computing (RISC) architecture for optimized performance and power efficiency.

ADC Channels: YES

Includes Analog to Digital Converter (ADC) channels for capturing analog signals and converting them to digital data for processing.

Connectivity: CAN, I2C, UART

Supports multiple communication protocols, enabling seamless integration with various external devices and systems.

Technical Specifications

Microcontrollers LM3S2678-IQR50-A0 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PQFP-G64

JESD-609 Code:

e3

Length:

10 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

1

No. of External Interrupts:

0

No. of I/O Lines:

33

No. of Serial I/Os:

3

No. of Terminals:

64

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP64,.47SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

CAN, I2C, UART

Peripherals:

DMA, PWM(4), QEI, TIMER(4), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S2678-IQR50-A0 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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