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LM3S2637-IBZ50-A2

Texas Instruments

LM3S2637-IBZ50-A2 by Texas Instruments

LM3S2637-IBZ50-A2 by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. It operates at a max clock frequency of 0.032 MHz, suitable for industrial applications requiring PWM channels and ADC channels. With a package style of GRID ARRAY and terminal finish of TIN SILVER COPPER, it offers high performance in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,229 parts In-Stock

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2,229

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Vyrian

USA . 1,962 parts In-Stock

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1,962

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Distributors (Availability)

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AZTECH Wire

Italy . 716 parts In-Stock

1+ parts

$18.763

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716

$18.763

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One Stop Electronics

USA . 1,415 parts In-Stock

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$19.000

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1,415

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Microchip USA

USA . 2,032 parts In-Stock

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$47.830

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$47.150

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$46.800

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$46.460

2,032

$47.830

$47.150

$46.800

$46.460

Parana Technologies

USA . 426 parts In-Stock

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$55.587

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426

$55.587

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ChromeModa Solutions

Germany . 6,549 parts In-Stock

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$62.457

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$51.215

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$62.457

$51.215

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IDEA Electronic Components Group

UK . 786 parts In-Stock

1+ parts

$62.457

100+ parts

$59.334

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$56.211

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786

$62.457

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$56.211

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Component Stockers USA

USA . 265 parts In-Stock

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$99.990

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265

$99.990

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Corphita

USA . 4,992 parts In-Stock

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DigiPath Technology Company

USA . 1,282 parts In-Stock

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$56.311

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1,282

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$56.311

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Overview

Experience the cutting-edge performance and reliability of Texas Instruments with the LM3S2637-IBZ50-A2 microcontroller. Designed for a wide range of applications, this powerful 32-bit device offers unmatched value and benefits to customers seeking high-quality solutions. With its advanced technology and industrial-grade temperature grade, this microcontroller provides optimal performance while ensuring long-lasting durability. Trust Texas Instruments for superior products that deliver exceptional results in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials offer durability and protection for the microcontroller, ensuring it can withstand various environmental conditions.

Surface Mount: YES

Ease of installation and space-saving design make this microcontroller suitable for compact electronic devices.

Maximum Supply Voltage: 2.75 V

Efficient power usage and lower voltage requirements contribute to energy savings and overall system efficiency.

Bit Size: 32

A larger bit size allows for more complex operations and calculations, making this microcontroller suitable for demanding applications.

No. of Terminals: 108

More terminals offer increased connectivity options and flexibility for integrating various components and peripherals.

ADC Channels: YES

Integrated ADC channels enable analog signal processing, making this microcontroller versatile for sensor-based applications.

ROM Words: 131072

Large ROM capacity allows for storing a substantial amount of program data and instructions, making this microcontroller suitable for complex algorithms and functions.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enhances processing speed and efficiency, making this microcontroller ideal for high-performance applications.

RAM Bytes: 32768

A generous amount of RAM enables efficient data storage and manipulation, improving overall system performance.

Technical Specifications

Microcontrollers LM3S2637-IBZ50-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

46

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S2637-IBZ50-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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