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LM3S2620-IBZ25-A2T

Texas Instruments

LM3S2620-IBZ25-A2T by Texas Instruments

Texas Instruments' LM3S2620-IBZ25-A2T is a 32-bit microcontroller with 131072 ROM words, 32768 RAM bytes, and 52 I/O lines. Operating at up to 25 MHz, it features PWM channels and ADC capabilities. Ideal for industrial applications requiring a reliable microcontroller with low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,415 parts In-Stock

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Digiode

USA . 2,966 parts In-Stock

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2,966

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Distributors (Availability)

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AZTECH Wire

Italy . 624 parts In-Stock

1+ parts

$5.145

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624

$5.145

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One Stop Electronics

USA . 890 parts In-Stock

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$6.000

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890

$6.000

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Parana Technologies

USA . 77 parts In-Stock

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$33.851

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$135.807

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77

$33.851

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$135.807

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DigiPath Technology Company

USA . 566 parts In-Stock

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$37.274

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$34.292

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566

$37.274

$34.292

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IDEA Electronic Components Group

UK . 1,848 parts In-Stock

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$38.035

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$36.133

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$34.232

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1,848

$38.035

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$34.232

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ChromeModa Solutions

Germany . 865 parts In-Stock

1+ parts

$38.035

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$31.189

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865

$38.035

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Microchip USA

USA . 2,081 parts In-Stock

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$38.350

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$37.800

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$37.530

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$37.250

2,081

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$37.800

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$37.250

Component Stockers USA

USA . 306 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,131 parts In-Stock

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Corphita

USA . 168 parts In-Stock

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Overview

Discover the LM3S2620-IBZ25-A2T by Texas Instruments, a high-quality microcontroller designed to meet the demands of industrial applications. With advanced features and a reliable manufacturer backing it, this product offers customers unmatched value and benefits. From its versatile package body material to its efficient power supplies and extensive ROM words, this microcontroller is perfect for a wide range of projects. Experience the advantages of using the LM3S2620-IBZ25-A2T and see how it can elevate your next design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/epoxy is a common and durable material for microcontroller packages, ensuring reliable protection for the internal components.

ADC Channels: YES

Having ADC channels allows for analog-to-digital conversion, increasing the versatility of the microcontroller for various sensor-based applications.

ROM Words: 131072

With a large ROM capacity of 131072 words, this microcontroller is capable of storing and executing complex programs efficiently.

Maximum Clock Frequency: 25 MHz

A high maximum clock frequency of 25 MHz ensures fast processing speeds and responsiveness in demanding applications.

Power Supplies (V): 2.5,3.3

Support for multiple power supply voltages (2.5V and 3.3V) allows flexibility in powering the microcontroller based on the specific requirements of the system.

RAM Bytes: 32768

With a generous RAM capacity of 32768 bytes, this microcontroller can efficiently handle data processing and storage for complex algorithms and applications.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC-based microcontroller ensures efficient and streamlined execution of instructions, improving overall performance and power efficiency.

Technical Specifications

Microcontrollers LM3S2620-IBZ25-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Additional Features:

ALSO REQUIRES 3.3 V IO SUPPLY

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

25 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

52

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S2620-IBZ25-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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