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LM3S1D21-IBZ80-A2

Texas Instruments

LM3S1D21-IBZ80-A2 by Texas Instruments

LM3S1D21-IBZ80-A2 by Texas Instruments is a 32-bit microcontroller with 524288 ROM words and 98304 RAM bytes. It operates at a max clock frequency of 16.384 MHz, making it suitable for industrial applications requiring high-speed processing and control capabilities. With features like ADC and PWM channels, this Cortex-M3 CPU family device offers versatile functionality for various embedded systems projects.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,621 parts In-Stock

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Digiode

USA . 2,602 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 766 parts In-Stock

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$11.439

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One Stop Electronics

USA . 1,324 parts In-Stock

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$29.000

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Parana Technologies

USA . 106 parts In-Stock

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$59.831

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106

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ChromeModa Solutions

Germany . 4,384 parts In-Stock

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$67.226

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$55.125

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4,384

$67.226

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IDEA Electronic Components Group

UK . 889 parts In-Stock

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$67.226

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$63.865

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$60.503

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889

$67.226

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Corphita

USA . 3,025 parts In-Stock

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DigiPath Technology Company

USA . 1,020 parts In-Stock

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$60.611

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Microchip USA

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Overview

Unlock the potential of your next project with the LM3S1D21-IBZ80-A2 microcontroller by Texas Instruments. Designed with cutting-edge technology and high-quality materials, this powerful Cortex-M3 CPU offers a seamless integration for a wide range of applications. With features like ADC and DMA channels, PWM channels, and a generous amount of RAM bytes, this microcontroller delivers reliability and efficiency in every use. Elevate your projects with the unmatched performance and innovation of the LM3S1D21-IBZ80-A2, setting new standards in the world of microcontrollers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the microcontroller.

Surface Mount: YES

Easy to install and saves space on the board.

Maximum Supply Voltage: 3.6 V

Can handle higher voltage inputs without damage.

Package Shape: SQUARE

Allows for efficient use of space on the PCB.

Bit Size: 32

Offers good processing power for various applications.

Power Supplies (V): 1.3,3.3

Supports multiple power supply options for flexibility.

No. of Terminals: 108

Provides a wide range of connectivity options.

CPU Family: CORTEX-M3

High-performance and energy-efficient processing.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments reliably.

Minimum Operating Temperature: -40 °C

Suitable for use in extreme cold conditions.

ADC Channels: YES

Allows for analog to digital conversion, enabling sensor interfacing.

DMA Channels: YES

Enables efficient data transfer without CPU intervention.

ROM Words: 524288

Offers ample space for program storage and firmware updates.

RAM Bytes: 98304

Sufficient memory to handle data processing and multitasking.

Maximum Clock Frequency: 16.384 MHz

Provides fast processing speed for real-time applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture for efficient and streamlined operations.

Technology: CMOS

Low power consumption and high noise immunity.

PWM Channels: YES

Enables precise control of motors and actuators.

Technical Specifications

Microcontrollers LM3S1D21-IBZ80-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

16.384 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

67

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,3.3

Qualification:

Not Qualified

RAM Bytes:

98304

ROM Words:

524288

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

135 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1D21-IBZ80-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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