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LM3S1958-EQC50-A2

Texas Instruments

LM3S1958-EQC50-A2 by Texas Instruments

Texas Instruments' LM3S1958-EQC50-A2 microcontroller features 32-bit architecture, 262144 ROM words, and 65536 RAM bytes. Ideal for industrial applications, it operates b/w -40 to 105°C with a clock frequency of 0.032 MHz. With PWM channels and ADC support, this CMOS technology-based device offers versatile control capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,364 parts In-Stock

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Digiode

USA . 769 parts In-Stock

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769

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Distributors (Availability)

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AZTECH Wire

Italy . 559 parts In-Stock

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$15.793

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559

$15.793

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One Stop Electronics

USA . 624 parts In-Stock

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$30.000

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Parana Technologies

USA . 1,614 parts In-Stock

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$56.964

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DigiPath Technology Company

USA . 2,145 parts In-Stock

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$62.724

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$57.706

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2,145

$62.724

$57.706

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ChromeModa Solutions

Germany . 2,012 parts In-Stock

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$64.004

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$52.483

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2,012

$64.004

$52.483

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IDEA Electronic Components Group

UK . 93 parts In-Stock

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$64.004

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$60.804

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$57.604

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93

$64.004

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Corphita

USA . 2,497 parts In-Stock

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Microchip USA

USA . 316 parts In-Stock

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Overview

Unlock the power of innovation with the LM3S1958-EQC50-A2 microcontroller from Texas Instruments. Designed with cutting-edge technology and precision craftsmanship, this versatile device is perfect for a wide range of applications in industries such as automotive, aerospace, and consumer electronics. With its high-quality construction and advanced features, this microcontroller offers unmatched performance and reliability, making it the ideal choice for your next project. Trust Texas Instruments to deliver superior products that exceed expectations and propel your creations to new heights of success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, suitable for a wide range of applications.

Maximum Supply Voltage: 2.75 V

This moderate maximum supply voltage allows for efficient power management and use in lower voltage applications.

Bit Size: 32

The 32-bit architecture provides high-performance computing capabilities and supports complex operations.

No. of Terminals: 100

Having 100 terminals enables versatile connectivity options and interface capabilities for different peripherals.

ADC Channels: YES

The presence of ADC channels allows for analog-to-digital conversion, making the product suitable for sensor interfacing and data acquisition applications.

ROM Words: 262144

With a large ROM capacity of 262144 words, the product can store extensive program code and data, enabling complex functionalities.

RAM Bytes: 65536

The generous RAM size of 65536 bytes facilitates efficient data processing, storage, and manipulation during operation.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a microcontroller with RISC architecture, the product offers fast and efficient processing capabilities suitable for embedded systems and control applications.

ROM Programmability: FLASH

The flash ROM programmability feature allows for easy and quick firmware updates, enhancing the product's versatility and adaptability to changing requirements.

No. of I/O Lines: 52

Having 52 I/O lines provides ample connectivity options for interfacing with various external devices and components, enhancing the product's versatility and usability.

Technical Specifications

Microcontrollers LM3S1958-EQC50-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

52

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1958-EQC50-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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