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LM3S1937-EQC50-A2

Texas Instruments

LM3S1937-EQC50-A2 by Texas Instruments

LM3S1937-EQC50-A2 by Texas Instruments is a 32-bit microcontroller with 262144 ROM words and 65536 RAM bytes. Operating at up to 0.032 MHz, it features 56 I/O lines and PWM channels for industrial applications requiring high-speed processing in a compact FLATPACK package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,475 parts In-Stock

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Digiode

USA . 618 parts In-Stock

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618

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AZTECH Wire

Italy . 200 parts In-Stock

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$11.314

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200

$11.314

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One Stop Electronics

USA . 835 parts In-Stock

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$25.000

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835

$25.000

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Parana Technologies

USA . 197 parts In-Stock

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$46.419

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197

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DigiPath Technology Company

USA . 964 parts In-Stock

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$51.113

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964

$51.113

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ChromeModa Solutions

Germany . 4,184 parts In-Stock

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$52.156

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$42.768

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$52.156

$42.768

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IDEA Electronic Components Group

UK . 496 parts In-Stock

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$52.156

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$49.548

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$46.940

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496

$52.156

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$46.940

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QUARKTWIN TECHNOLOGY LTD

USA . 14,340 parts In-Stock

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Microchip USA

USA . 5,354 parts In-Stock

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Corphita

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Overview

Experience the power of cutting-edge technology with the LM3S1937-EQC50-A2 microcontroller by Texas Instruments. Renowned for their top-notch quality and reliability, Texas Instruments delivers exceptional performance in a compact package. Ideal for a wide range of applications, this microcontroller offers unmatched value with its advanced features and benefits. Unlock endless possibilities and enhance your projects with the LM3S1937-EQC50-A2 microcontroller today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external elements, ensuring the longevity of the product.

Surface Mount: YES

Allows for easy and efficient installation on PCBs, saving time and effort during assembly.

Maximum Supply Voltage: 2.75 V

Suitable for low power applications, making it energy efficient.

Bit Size: 32

Offers high processing capabilities and performance for complex tasks and calculations.

Power Supplies (V): 2.5, 3.3

Provides flexibility in power input options for compatibility with various systems.

No. of Terminals: 100

Offers ample connectivity options for peripherals and accessories.

Package Style (Meter): FLATPACK

Compact design for space-efficient integration and installation.

Minimum Supply Voltage: 2.25 V

Allows for operation in low power conditions without compromising performance.

Maximum Operating Temperature: 105 °C

Ensures reliability in harsh environments by withstanding high temperatures.

Minimum Operating Temperature: -40 °C

Can function in extreme cold conditions without losing functionality.

Terminal Finish: TIN

Provides a good electrical connection and corrosion resistance for long-lasting performance.

ADC Channels: YES

Supports analog-to-digital conversion for versatile sensor and input compatibility.

ROM Words: 262144

Offers ample memory for storing program instructions and data, enabling complex applications.

Maximum Seated Height: 1.6 mm

Low profile design for compact and slim devices.

Width: 14 mm

Compact form factor for space-saving integration in various equipment.

Maximum Clock Frequency: 0.032 MHz

High clock speed for fast and responsive operation.

Length: 14 mm

Compact size for easy integration in tight spaces.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in industrial environments with varying temperatures.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes RISC architecture for efficient processing and control of connected peripherals.

RAM Bytes: 65536

Sufficient RAM capacity for storing data and variables during operation.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for reliable operation.

Terminal Form: GULL WING

Facilitates easy soldering and strong mechanical connection on PCBs.

Nominal Supply Voltage: 2.5 V

Optimal voltage level for stable and efficient operation of the microcontroller.

PWM Channels: YES

Supports Pulse Width Modulation for precise control of output signals.

ROM Programmability: FLASH

Flash memory allows for easy reprogramming and updating of firmware.

Terminal Pitch: 0.5 mm

Fine pitch for high-density PCB designs with increased connectivity options.

Moisture Sensitivity Level (MSL): 3

Resistant to moisture damage, ensuring reliability in humid environments.

Speed: 50 rpm

Capable of handling tasks at a fast rotational speed for efficient performance.

No. of I/O Lines: 56

Offers a good number of Input/Output lines for connecting external devices and peripherals.

Technical Specifications

Microcontrollers LM3S1937-EQC50-A2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

56

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1937-EQC50-A2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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