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LM3S1651-IBZ80-C3T

Texas Instruments

LM3S1651-IBZ80-C3T by Texas Instruments

LM3S1651-IBZ80-C3T by Texas Instruments is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. It operates at a max clock frequency of 16 MHz, suitable for industrial applications requiring high-speed processing. With features like ADC and DMA channels, it offers versatile functionality in a compact square package ideal for various electronic systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,822 parts In-Stock

1+ parts

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3,822

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Digiode

USA . 2,344 parts In-Stock

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2,344

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 898 parts In-Stock

1+ parts

$7.000

100+ parts

-

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898

$7.000

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AZTECH Wire

Italy . 810 parts In-Stock

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$12.843

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810

$12.843

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Parana Technologies

USA . 2,375 parts In-Stock

1+ parts

$69.755

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2,375

$69.755

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DigiPath Technology Company

USA . 822 parts In-Stock

1+ parts

$76.808

100+ parts

$70.664

1k+ parts

-

10k+ parts

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822

$76.808

$70.664

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ChromeModa Solutions

Germany . 5,257 parts In-Stock

1+ parts

$78.376

100+ parts

$64.268

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5,257

$78.376

$64.268

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IDEA Electronic Components Group

UK . 1,234 parts In-Stock

1+ parts

$78.376

100+ parts

$74.457

1k+ parts

$70.538

10k+ parts

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1,234

$78.376

$74.457

$70.538

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Microchip USA

USA . 480 parts In-Stock

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480

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Corphita

USA . 428 parts In-Stock

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428

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Overview

Upgrade your projects with the high-quality LM3S1651-IBZ80-C3T microcontroller by Texas Instruments! This versatile device offers unmatched performance and reliability, thanks to its cutting-edge technology and innovative design. Perfect for a wide range of applications, this microcontroller provides seamless integration, enhanced functionality, and optimal power efficiency. Experience the value and benefits that only Texas Instruments can deliver with the LM3S1651-IBZ80-C3T!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and protection, making the microcontroller suitable for various environments.

Bit Size: 32

A 32-bit microcontroller offers higher processing capability and performance compared to lower bit sizes.

ADC Channels: YES

Analog-to-digital converter channels allow for efficient conversion of analog signals to digital data, increasing the versatility of the microcontroller.

DMA Channels: YES

Direct memory access channels enable faster data transfer and processing, enhancing the efficiency of the microcontroller.

ROM Programmability: FLASH

Flash programmable ROM allows for flexibility and ease of reprogramming, making it suitable for applications that require frequent updates or changes.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture in the microcontroller's peripheral IC type offers optimized performance and power efficiency for high-speed processing tasks.

Technical Specifications

Microcontrollers LM3S1651-IBZ80-C3T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

16 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

67

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

80 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1651-IBZ80-C3T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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