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LM3S1637-EQC50-A2T

Texas Instruments

LM3S1637-EQC50-A2T by Texas Instruments

Texas Instruments' LM3S1637-EQC50-A2T is a 32-bit microcontroller with 131072 ROM words and 32768 RAM bytes. Operating at up to 0.032 MHz, it features 43 I/O lines and PWM channels for industrial applications requiring a temperature range of -40 to 105 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,232 parts In-Stock

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Digiode

USA . 328 parts In-Stock

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328

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One Stop Electronics

USA . 1,120 parts In-Stock

1+ parts

$3.000

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1,120

$3.000

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AZTECH Wire

Italy . 506 parts In-Stock

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$5.737

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506

$5.737

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Parana Technologies

USA . 1 parts In-Stock

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$26.438

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$27.025

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1

$26.438

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$27.025

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ChromeModa Solutions

Germany . 2,127 parts In-Stock

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$29.706

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$24.359

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2,127

$29.706

$24.359

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IDEA Electronic Components Group

UK . 619 parts In-Stock

1+ parts

$29.706

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$28.221

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$26.735

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619

$29.706

$28.221

$26.735

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Corphita

USA . 614 parts In-Stock

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DigiPath Technology Company

USA . 404 parts In-Stock

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$26.783

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Microchip USA

USA . 304 parts In-Stock

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Overview

Experience the next level of innovation with the LM3S1637-EQC50-A2T by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality microcontrollers that are versatile and reliable. Ideal for a wide range of applications, this product offers exceptional value with its robust features and superior performance. Take advantage of the benefits of this cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the microcontroller, making it suitable for a wide range of applications.

Surface Mount: YES

Allows for easy and efficient assembly onto circuit boards, saving time and space.

Maximum Supply Voltage: 2.75 V

Suitable for low-power applications and helps to prevent damage from overvoltage.

Bit Size: 32

Offers high computational power and efficiency for processing tasks.

Power Supplies (V): 2.5, 3.3

Provides flexibility in power options to accommodate different voltage requirements.

No. of Terminals: 100

Sufficient number of terminals for connecting various external components and interfaces.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold environments without issues, suitable for a wide range of applications.

ADC Channels: YES

Allows for analog-to-digital conversion, enabling the microcontroller to read and process analog signals.

ROM Words: 131072

Large ROM capacity for storing program instructions and data.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes a RISC architecture for efficient data processing and control operations.

RAM Bytes: 32768

Sufficient RAM capacity for temporary data storage and processing.

Technology: CMOS

Low power consumption and high noise immunity characteristics of CMOS technology.

PWM Channels: YES

Supports pulse-width modulation for precise control of digital signals.

Technical Specifications

Microcontrollers LM3S1637-EQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e3

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

43

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

32768

ROM Words:

131072

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1637-EQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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