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LM3S1512-IBZ25-A2T

Texas Instruments

LM3S1512-IBZ25-A2T by Texas Instruments

LM3S1512-IBZ25-A2T by Texas Instruments is a 32-bit microcontroller with 108 terminals, operating at a max frequency of 0.032 MHz. It features 65536 bytes of RAM and 98304 ROM words, suitable for industrial applications requiring PWM and ADC channels.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,468 parts In-Stock

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Digiode

USA . 2,534 parts In-Stock

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2,534

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Distributors (Availability)

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One Stop Electronics

USA . 711 parts In-Stock

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$1.000

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711

$1.000

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AZTECH Wire

Italy . 806 parts In-Stock

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$16.291

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806

$16.291

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Ampacity Inc.

Singapore . 783 parts In-Stock

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$17.000

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783

$17.000

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Microchip USA

USA . 2,843 parts In-Stock

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$37.580

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$37.050

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$36.780

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$36.510

2,843

$37.580

$37.050

$36.780

$36.510

Parana Technologies

USA . 1,781 parts In-Stock

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$49.726

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1,781

$49.726

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IDEA Electronic Components Group

UK . 598 parts In-Stock

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$55.872

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$53.078

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$50.285

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598

$55.872

$53.078

$50.285

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ChromeModa Solutions

Germany . 536 parts In-Stock

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$55.872

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$45.815

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$45.815

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DigiPath Technology Company

USA . 1,935 parts In-Stock

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$50.374

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Corphita

USA . 985 parts In-Stock

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Overview

Experience the power of innovation with the LM3S1512-IBZ25-A2T by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers high-quality microcontrollers that are versatile and reliable. Ideal for a wide range of applications, this product offers customers unmatched value, benefits, and advantages. With advanced features and top-notch performance, the LM3S1512-IBZ25-A2T is the perfect choice for your next project. Don't settle for anything less than excellence – choose Texas Instruments for all your microcontroller needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the microcontroller, making it durable and reliable for various applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost during manufacturing.

Maximum Supply Voltage: 2.75 V

Operates within a safe voltage range, preventing damage to the microcontroller.

Bit Size: 32

Offers high processing capability and efficiency for handling complex algorithms and computations.

Power Supplies (V): 2.5,3.3

Supports multiple power supply options, providing flexibility for different system requirements.

No. of Terminals: 108

Plenty of terminals for connecting to other components, enhancing the microcontroller's functionality.

Package Style (Meter): GRID ARRAY

Grid array package style offers a high level of reliability and robustness, ideal for industrial applications.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Capable of functioning in extreme cold conditions, ensuring reliable performance in harsh environments.

Terminal Finish: TIN SILVER COPPER

The triple finish provides excellent conductivity and protection against corrosion, extending the lifespan of the microcontroller.

ADC Channels: YES

Integrated ADC channels allow for analog input conversion, enabling the microcontroller to interface with sensors and other analog devices.

Terminal Position: BOTTOM

Bottom terminal position offers ease of soldering and connection to the PCB, improving the overall assembly process.

ROM Words: 98304

Large ROM capacity for storing program data and instructions, accommodating complex firmware requirements.

Width: 10 mm

Compact width size saves space on the PCB, suitable for designs with limited board real estate.

Maximum Clock Frequency: 0.032 MHz

High clock frequency allows for fast execution of instructions, enhancing overall system performance.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture provides efficient instruction execution and processing, delivering high performance in embedded applications.

RAM Bytes: 65536

Large RAM capacity for storing variables and temporary data, supporting multitasking and data-intensive operations.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the microcontroller energy-efficient and reliable.

Terminal Form: BALL

Ball terminal form allows for reliable connections and high-density packaging, suitable for advanced SMT assembly processes.

Nominal Supply Voltage: 2.5 V

Stable nominal supply voltage ensures consistent performance and reliability of the microcontroller.

PWM Channels: YES

Integrated PWM channels provide precise control over analog outputs, enabling smooth and accurate signal modulation.

ROM Programmability: FLASH

Flash programmable ROM allows for easy firmware updates and modifications, ensuring flexibility and adaptability in the field.

Terminal Pitch: 0.8 mm

Compact terminal pitch for high-density mounting, enabling efficient PCB layout and space-saving designs.

Moisture Sensitivity Level (MSL): 3

MSL 3 rating indicates moderate sensitivity to moisture, requiring standard handling and storage procedures to prevent damage.

Speed: 25 rpm

Capable of processing data at a speed of 25 rotations per minute, suitable for real-time control and monitoring applications.

No. of I/O Lines: 58

Provides a sufficient number of I/O lines for interfacing with external devices and peripherals, enhancing connectivity and functionality.

Technical Specifications

Microcontrollers LM3S1512-IBZ25-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

58

No. of Terminals:

108

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

65536

ROM Words:

98304

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Trade Compliance

LM3S1512-IBZ25-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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