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LM3S1166-IQC50-A2T

Texas Instruments

LM3S1166-IQC50-A2T by Texas Instruments

LM3S1166-IQC50-A2T by Texas Instruments is a 32-bit microcontroller with 65536 ROM words and 16384 RAM bytes. It operates at a max clock frequency of 8.192 MHz, making it ideal for industrial applications requiring high-speed processing and multiple PWM channels. With a temperature range from -40 to 85°C, this microcontroller is suitable for various embedded systems that demand reliable performance in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,099 parts In-Stock

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Digiode

USA . 524 parts In-Stock

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AZTECH Wire

Italy . 325 parts In-Stock

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$17.368

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325

$17.368

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One Stop Electronics

USA . 359 parts In-Stock

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$23.000

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Parana Technologies

USA . 686 parts In-Stock

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$59.297

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ChromeModa Solutions

Germany . 1,111 parts In-Stock

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$66.626

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$54.633

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IDEA Electronic Components Group

UK . 878 parts In-Stock

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$66.626

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$63.295

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$59.963

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878

$66.626

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$59.963

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DigiPath Technology Company

USA . 1,310 parts In-Stock

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$60.070

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Corphita

USA . 914 parts In-Stock

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Microchip USA

USA . 132 parts In-Stock

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Overview

Unleash the power of innovation with the LM3S1166-IQC50-A2T by Texas Instruments, a cutting-edge microcontroller that sets the standard for quality and reliability. With a wide range of applications in various industries, this product offers unmatched value and benefits to customers looking to streamline their processes and enhance efficiency. Trust in Texas Instruments' reputation for excellence and elevate your projects to new heights with the LM3S1166-IQC50-A2T.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable housing for the microcontroller, making it suitable for a variety of applications.

Surface Mount: YES

Allows for easy mounting on PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 2.75 V

Ensures safe operation within specified voltage range and protects the microcontroller from overvoltage.

Bit Size: 32

Offers high computational capabilities and processing power for complex tasks.

Power Supplies (V): 2.5,3.3

Provides flexibility in power options for different applications, ensuring compatibility with various voltage sources.

No. of Terminals: 100

Allows for multiple connections and interfaces, enabling versatile connectivity in electronic systems.

Minimum Supply Voltage: 2.25 V

Ensures reliable operation even at lower voltage levels, increasing the efficiency of power usage.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, making it suitable for industrial environments with demanding operating conditions.

Minimum Operating Temperature: -40 °C

Maintains functionality in extreme cold environments, enhancing the microcontroller's reliability in diverse settings.

ADC Channels: YES

Enables analog-to-digital conversion for precise sensor interfacing and data acquisition.

Terminal Position: QUAD

Provides a standardized terminal layout for easy integration and compatibility with existing circuit designs.

ROM Words: 65536

Offers ample storage capacity for program data and instructions, supporting complex applications and algorithms.

Width: 14 mm

Compact form factor allows for space-efficient PCB layout and integration into small-scale electronic devices.

Maximum Clock Frequency: 8.192 MHz

Delivers high-speed processing capabilities for time-critical tasks and real-time applications.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in harsh industrial environments with stringent temperature requirements.

Peripheral IC Type: MICROCONTROLLER, RISC

Utilizes a RISC architecture for efficient instruction execution and low power consumption, ideal for embedded systems.

RAM Bytes: 16384

Provides a sizable amount of volatile memory for data storage and manipulation during program execution.

Technology: CMOS

Employs CMOS technology for low power consumption, reducing energy usage and prolonging battery life in portable devices.

Terminal Form: GULL WING

Facilitates easy soldering and mounting on the PCB, ensuring secure electrical connections and mechanical stability.

Nominal Supply Voltage: 2.5 V

Standard voltage level for stable operation and compatibility with common power sources in electronic devices.

PWM Channels: YES

Supports pulse-width modulation for precise control of analog signals, ideal for motor speed regulation and LED dimming.

ROM Programmability: FLASH

Utilizes flash memory technology for erasable and reprogrammable ROM, allowing for firmware updates and customizations.

Terminal Pitch: 0.5 mm

Fine terminal pitch enables high-density integration on the PCB, saving space and improving signal routing efficiency.

Speed: 50 rpm

Indicates the rotational speed of a motor or device that can be controlled and regulated by the microcontroller's PWM channels.

No. of I/O Lines: 43

Offers a sufficient number of input/output lines for versatile interfacing with external sensors, actuators, and peripherals.

Technical Specifications

Microcontrollers LM3S1166-IQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

43

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1166-IQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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