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LM3S1150-EQC50-A2T

Texas Instruments

LM3S1150-EQC50-A2T by Texas Instruments

Texas Instruments' LM3S1150-EQC50-A2T is a 32-bit microcontroller with 65536 ROM words and 16384 RAM bytes. Operating at up to 0.032 MHz, it features 52 I/O lines and PWM channels for industrial applications requiring high-speed processing and precise control.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,322 parts In-Stock

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Vyrian

USA . 2,559 parts In-Stock

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AZTECH Wire

Italy . 821 parts In-Stock

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$8.237

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One Stop Electronics

USA . 1,266 parts In-Stock

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$26.000

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Parana Technologies

USA . 83 parts In-Stock

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$70.690

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DigiPath Technology Company

USA . 2,163 parts In-Stock

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$77.838

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$71.611

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IDEA Electronic Components Group

UK . 1,508 parts In-Stock

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$79.427

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$75.456

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$71.484

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1,508

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ChromeModa Solutions

Germany . 75 parts In-Stock

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$79.427

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$65.130

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QUARKTWIN TECHNOLOGY LTD

USA . 15,116 parts In-Stock

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Corphita

USA . 1,195 parts In-Stock

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Microchip USA

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Overview

Experience cutting-edge technology with the LM3S1150-EQC50-A2T microcontroller by Texas Instruments. As a trusted leader in the industry, Texas Instruments delivers top-notch quality and reliability in all their products. This microcontroller opens up a world of possibilities with its versatile applications in various industries. From robotics to consumer electronics, this product offers unmatched value, benefits, and advantages to customers looking for high-performance solutions. Upgrade your projects with the LM3S1150-EQC50-A2T and experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the microcontroller lightweight and durable, ideal for portable and long-lasting applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, simplifying the manufacturing process and saving space.

Maximum Supply Voltage: 2.75 V

A maximum supply voltage of 2.75V ensures safe operation and prevents damage to the microcontroller in case of voltage spikes.

Bit Size: 32

The 32-bit architecture provides high processing power and efficiency, suitable for complex applications that require fast data processing.

Power Supplies (V): 2.5,3.3

Dual power supply options of 2.5V and 3.3V offer flexibility in voltage selection, accommodating a wide range of power requirements.

No. of Terminals: 100

With 100 terminals, the microcontroller offers ample connectivity options for interfacing with various external devices and components.

Package Style (Meter): FLATPACK

The flatpack package style allows for easy mounting onto PCBs and ensures efficient heat dissipation, contributing to the overall reliability of the product.

Minimum Operating Temperature: -40 °C

The wide operating temperature range of -40°C ensures reliable performance in harsh environmental conditions, making it suitable for industrial applications.

ADC Channels: YES

The presence of ADC channels enables the microcontroller to convert analog signals to digital data, making it versatile for applications that require analog inputs.

ROM Words: 65536

With a ROM size of 65536 words, the microcontroller can store large amounts of program data, allowing for complex algorithms and applications to be executed efficiently.

Technical Specifications

Microcontrollers LM3S1150-EQC50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G100

Length:

14 mm

No. of I/O Lines:

52

No. of Terminals:

100

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

14 mm

Peripheral IC Type:

Trade Compliance

LM3S1150-EQC50-A2T Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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