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LM3S1138-IBZ50-A2T

Texas Instruments

LM3S1138-IBZ50-A2T by Texas Instruments

Texas Instruments LM3S1138-IBZ50-A2T microcontroller features 32-bit CPU, 16384 bytes RAM, and 65536 ROM words. Ideal for industrial applications with peripherals like 4 timers, ADC with 8 channels, and connectivity options such as I2C(2), SSI(2), UART(3).

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,861 parts In-Stock

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Digiode

USA . 3,111 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 296 parts In-Stock

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$9.736

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One Stop Electronics

USA . 813 parts In-Stock

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813

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Parana Technologies

USA . 2,074 parts In-Stock

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$37.565

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ChromeModa Solutions

Germany . 5,466 parts In-Stock

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$42.208

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$34.611

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IDEA Electronic Components Group

UK . 147 parts In-Stock

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$42.208

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$40.098

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$37.987

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147

$42.208

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$37.987

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DigiPath Technology Company

USA . 1,608 parts In-Stock

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$38.055

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Corphita

USA . 1,503 parts In-Stock

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Authorized Procurement Solutions

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Microchip USA

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Overview

Unlock the limitless possibilities of innovation with the LM3S1138-IBZ50-A2T microcontroller by Texas Instruments. This high-quality product offers unmatched reliability and precision, making it a top choice for a wide range of applications in the industry. From enhancing automation processes to powering cutting-edge IoT solutions, this microcontroller delivers exceptional performance while maintaining low power consumption. Trust Texas Instruments to provide you with the tools you need to bring your ideas to life and stay ahead of the curve. Elevate your projects with the LM3S1138-IBZ50-A2T microcontroller today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the microcontroller durable and resistant to physical damage, ensuring a longer lifespan.

Integrated Cache: YES

Having integrated cache helps in improving the performance and speed of the microcontroller by reducing access times to frequently used data.

Maximum Supply Voltage: 2.75 V

This voltage range allows for efficient power usage and helps in preventing over-voltage damage to the microcontroller.

CPU Family: CORTEX-M3

Being part of the Cortex-M3 family ensures compatibility with a wide range of software and development tools, making it easier to work with.

Maximum Clock Frequency: 8.192 MHz

The high clock frequency allows for faster processing speed and the execution of complex tasks efficiently.

ROM Bytes: 65536

The large ROM capacity provides ample storage space for programs and data, allowing for more functionality and customization.

ADC Channels: YES

Having ADC channels enables the microcontroller to interface with analog sensors and devices, expanding its range of applications.

Connectivity: I2C(2), SSI(2), UART(3)

Supporting multiple connectivity options makes it versatile and compatible with a wide range of external devices and communication protocols.

Peripheral IC Type: MICROCONTROLLER, RISC

Being a RISC microcontroller ensures efficient and streamlined operation, leading to faster execution of instructions.

Technical Specifications

Microcontrollers LM3S1138-IBZ50-A2T attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Boundary Scan:

YES

CPU Family:

CORTEX-M3

Maximum Clock Frequency:

8.192 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

Format:

FIXED POINT

Integrated Cache:

YES

JESD-30 Code:

S-PBGA-B108

JESD-609 Code:

e1

Length:

10 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of DMA Channels:

0

No. of External Interrupts:

0

No. of I/O Lines:

46

No. of Serial I/Os:

7

No. of Terminals:

108

No. of Timers:

4

On Chip Data RAM Width:

8

On Chip Program ROM Width:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA108,12X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5,3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

65536

ROM Programmability:

FLASH

Maximum Seated Height:

1.5 mm

Speed:

50 rpm

Sub-Category:

Microcontrollers

Maximum Supply Voltage:

2.75 V

Minimum Supply Voltage:

2.25 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10 mm

Peripheral IC Type:

Data EEPROM Size:

0

Connectivity:

I2C(2), SSI(2), UART(3)

Peripherals:

TIMER(4), WDT

Analog To Digital Convertors:

8-Ch 10-Bit

Trade Compliance

LM3S1138-IBZ50-A2T Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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