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LM3S101-IGZ20-C2

Texas Instruments

LM3S101-IGZ20-C2 by Texas Instruments

LM3S101-IGZ20-C2 by Texas Instruments is a 32-bit microcontroller with 2048 bytes of RAM and 8192 ROM words. Operating at up to 0.032 MHz, it features 18 I/O lines, PWM channels, and ADC channels. Ideal for industrial applications requiring a small outline package with a temperature range of -40 to 105°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,649 parts In-Stock

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4,649

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Digiode

USA . 3,427 parts In-Stock

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3,427

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AZTECH Wire

Italy . 588 parts In-Stock

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$18.929

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588

$18.929

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One Stop Electronics

USA . 1,394 parts In-Stock

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$26.000

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$26.000

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Parana Technologies

USA . 1,853 parts In-Stock

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$46.489

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$46.489

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DigiPath Technology Company

USA . 953 parts In-Stock

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$51.190

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$47.095

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953

$51.190

$47.095

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IDEA Electronic Components Group

UK . 1,384 parts In-Stock

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$52.235

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$49.623

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$47.012

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1,384

$52.235

$49.623

$47.012

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ChromeModa Solutions

Germany . 234 parts In-Stock

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$52.235

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$42.833

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234

$52.235

$42.833

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Microchip USA

USA . 2,000 parts In-Stock

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Lixinc

USA . 1,342 parts In-Stock

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Corphita

USA . 1,091 parts In-Stock

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Overview

Unlock the power of innovation with the LM3S101-IGZ20-C2 microcontroller by Texas Instruments. Built with precision and expertise, this product offers unparalleled quality and reliability for a wide range of applications. Experience seamless performance and efficiency with its advanced features and design. Whether you're designing smart devices or industrial automation systems, this microcontroller delivers exceptional value and benefits to meet your project needs. Trust in Texas Instruments to elevate your creations to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the microcontroller, making it a reliable choice for various applications.

Maximum Supply Voltage: 3.6 V

Higher maximum supply voltage allows for flexibility in power supply options and compatibility with a wide range of systems.

Bit Size: 32

32-bit architecture provides enhanced processing power and efficiency for handling complex tasks and computations.

ROM Words: 8192

Ample ROM capacity allows for storing larger programs and data, enabling more versatile functionality for the microcontroller.

RAM Bytes: 2048

Sufficient RAM capacity enables quick data access and manipulation, improving overall performance of the microcontroller.

Maximum Clock Frequency: 0.032 MHz

High clock frequency ensures faster processing speed and responsiveness, ideal for time-sensitive applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC architecture enhances the efficiency and performance of the microcontroller by optimizing instruction execution and resource utilization.

PWM Channels: YES

Pulse Width Modulation (PWM) support enables precise control of analog signals, making the microcontroller suitable for applications like motor control and power management.

Technical Specifications

Microcontrollers LM3S101-IGZ20-C2 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

Maximum Clock Frequency:

.032 MHz

DAC Channels:

NO

DMA Channels:

NO

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-N48

Length:

6.875 mm

No. of I/O Lines:

18

No. of Terminals:

48

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC48,.27SQ,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

RAM Bytes:

2048

ROM Words:

8192

ROM Programmability:

FLASH

Maximum Seated Height:

1 mm

Speed:

20 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

50 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

6.875 mm

Peripheral IC Type:

Trade Compliance

LM3S101-IGZ20-C2 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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