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HPA01113AIRGVR

Texas Instruments

HPA01113AIRGVR by Texas Instruments

Texas Instruments' HPA01113AIRGVR is a Power Management IC with 16 terminals, operating at -40 to 125 °C. It supports 3 channels and has a supply voltage range of 2.7V to 5.5V, making it ideal for automotive applications requiring precise power supply support circuits in compact spaces.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 6,846 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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150

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Digiode

USA . 98 parts In-Stock

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Semicontronic

India . 944 parts In-Stock

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$2.500

100+ parts

$2.438

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$2.425

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944

$2.500

$2.438

$2.425

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One Stop Electronics

USA . 1,068 parts In-Stock

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$4.500

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$4.500

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Parana Technologies

USA . 470 parts In-Stock

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$6.127

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$6.897

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$6.127

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Ampacity Inc.

Singapore . 1,492 parts In-Stock

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$6.500

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DigiPath Technology Company

USA . 811 parts In-Stock

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$6.746

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$6.207

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811

$6.746

$6.207

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ChromeModa Solutions

Germany . 3,549 parts In-Stock

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$6.884

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$5.645

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$6.884

$5.645

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IDEA Electronic Components Group

UK . 14 parts In-Stock

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$6.884

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$6.196

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$6.196

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AZTECH Wire

Italy . 828 parts In-Stock

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$11.446

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Corohmni

South Africa . 633 parts In-Stock

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$22.416

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Component Stockers USA

USA . 320 parts In-Stock

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$99.990

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Kepictronics

USA . 60,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,411 parts In-Stock

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Corphita

USA . 3,630 parts In-Stock

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Lixinc

USA . 2,613 parts In-Stock

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Argo Parts USA

USA . 2,573 parts In-Stock

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Authorized Procurement Solutions

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Bastille Electronics

Australia . 87 parts In-Stock

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Overview

Unleash the power of efficient energy management with the HPA01113AIRGVR by Texas Instruments. Crafted with precision and expertise, this Power Management IC is designed to optimize performance and enhance reliability in various applications. With a robust package body material and innovative surface mount technology, this product ensures seamless integration and long-lasting functionality. Elevate your projects with the superior quality and unmatched value of Texas Instruments' Power Management ICs, where cutting-edge technology meets exceptional results. Choose excellence, choose Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package material provides good durability and allows for cost-effective production.

Surface Mount: YES

Allows for easy and convenient installation on a PCB.

Nominal Supply Voltage (Vsup): 3.3 V

Ideal supply voltage for many applications, providing a good balance between power consumption and performance.

Maximum Operating Temperature: 125 °C

Ensures reliable operation even in high-temperature environments.

Width (mm): 4 mm

Compact width allows for space-efficient placement on a PCB.

Minimum Supply Voltage (Vsup): 2.7 V

Wide range of supply voltage allows for flexibility in power input.

Temperature Grade: AUTOMOTIVE

Suitable for automotive applications, ensuring reliability and durability in harsh operating conditions.

Maximum Supply Current (Isup): 0.45 mA

Low supply current helps in reducing power consumption and heat generation.

No. of Channels: 3

Multiple channels allow for efficient power management and distribution.

Adjustable Threshold: YES

Allows for flexibility in setting threshold voltage according to specific application requirements.

Technical Specifications

Power Management ICs HPA01113AIRGVR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Additional Features:

RESET THRESHOLD VOLTAGE IS 2V

Adjustable Threshold:

YES

JESD-30 Code:

S-PQCC-N16

JESD-609 Code:

e4

Length:

4 mm

Moisture Sensitivity Level (MSL):

2

No. of Channels:

3

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Current (Isup):

.45 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

QUAD

Nominal Threshold Voltage (V):

+2V

Maximum Time At Peak Reflow Temperature (s):

30

Width (mm):

4 mm

Trade Compliance

HPA01113AIRGVR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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