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HPA00596BDR

Texas Instruments

HPA00596BDR by Texas Instruments

Texas Instruments' HPA00596BDR is a Power Management IC with 3.3V nominal voltage, suitable for industrial applications. It features a small outline package style, dual terminal position, and peak reflow temperature of 260°C. With 2 channels and surface mount capability, it offers efficient power supply support in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,251 parts In-Stock

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Digiode

USA . 2,101 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Semicontronic

India . 591 parts In-Stock

1+ parts

$4.500

100+ parts

$4.388

1k+ parts

$4.365

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591

$4.500

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$4.365

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Ampacity Inc.

Singapore . 682 parts In-Stock

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$5.500

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682

$5.500

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Corohmni

South Africa . 45 parts In-Stock

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$7.390

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$7.390

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One Stop Electronics

USA . 1,374 parts In-Stock

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$7.500

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$7.500

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AZTECH Wire

Italy . 485 parts In-Stock

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$18.922

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$18.922

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Parana Technologies

USA . 2,180 parts In-Stock

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$20.385

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$20.416

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$20.385

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DigiPath Technology Company

USA . 383 parts In-Stock

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$22.446

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ChromeModa Solutions

Germany . 6,017 parts In-Stock

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$22.904

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$18.781

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IDEA Electronic Components Group

UK . 1,591 parts In-Stock

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$22.904

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$21.759

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$20.614

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1,591

$22.904

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$23.779

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$22.590

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$22.590

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Continental Prestige Electronics

USA . 6,601 parts In-Stock

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Argo Parts USA

USA . 4,047 parts In-Stock

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Corphita

USA . 3,256 parts In-Stock

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Microchip USA

USA . 1,181 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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Overview

Enhance your power management solutions with the HPA00596BDR by Texas Instruments. Manufactured with top-notch quality and reliability, this Power Management IC is designed for industrial applications where precision and efficiency are paramount. With its compact design and dual-channel capability, it offers unparalleled value and convenience to customers seeking optimal performance in their systems. Trust Texas Instruments for cutting-edge technology that delivers outstanding results every time. Choose the HPA00596BDR for your power management needs and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for portable devices.

Surface Mount: YES

Surface mount technology allows for easy installation and integration into circuit boards.

Nominal Supply Voltage (Vsup): 3.3 V

Compatibility with a commonly used supply voltage makes it versatile for various applications.

No. of Terminals: 8

Sufficient number of terminals for connecting to other components in a circuit.

Maximum Operating Temperature: 85 °C

High operating temperature range allows for reliable performance in various environments.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures functionality in extreme cold conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

High-quality terminal finish for improved conductivity and corrosion resistance.

No. of Channels: 2

Dual channels provide more flexibility and control in power management.

Technical Specifications

Power Management ICs HPA00596BDR attributes and parameters. Explore more Power Management ICs devices from Texas Instruments

Specs

Adjustable Threshold:

NO

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

2

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width (mm):

3.9 mm

Trade Compliance

HPA00596BDR Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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